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Article Dans Une Revue Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Année : 2007

Diffusion of oxygen atom in the topmost layer of the Si(1 0 0) surface: Structures and oxidation kinetics

Résumé

The incorporations and migrations of the atomic oxygen in the topmost layer Si(1 0 0)-p(2 × 2) silicon surface, are investigated theoretically using density functional theory. We show that the diffusion is dependent on the starting and the final surrounding environment and does not simply consist in hops from one silicon–silicon bond to another. The activation energies range from 0.11 eV to 2.59 eV.

Dates et versions

hal-01575528 , version 1 (21-08-2017)

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Anne Hémeryck, Nicolas Richard, Alain Estève, Mehdi Djafari-Rouhani. Diffusion of oxygen atom in the topmost layer of the Si(1 0 0) surface: Structures and oxidation kinetics. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2007, 601 (11), pp.2339-2343. ⟨10.1016/j.susc.2007.03.038⟩. ⟨hal-01575528⟩
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