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Article Dans Une Revue Materials Science Forum Année : 2014

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Résumé

In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from 11.9 cm2/Vs to 92.4 cm2/Vs, it will be shown that for p-doping concentrations above 5·1016 cm-3 Coulomb scattering is the dominant scattering mechanism for both, low- and high-field mobility. In contrast, for p-doping concentrations below 5·1016, cm-3 further scattering mechanisms will be considered that may account for the observed mobility trend at high electric fields.
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Dates et versions

hal-01921817 , version 1 (26-11-2018)

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Christian Strenger, Viktoryia Uhnevionak, Vincent Mortet, Guillermo Ortiz, Tobias Erlbacher, et al.. Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs. Materials Science Forum, 2014, 778-780, pp.583 - 586. ⟨10.4028/www.scientific.net/msf.778-780.583⟩. ⟨hal-01921817⟩
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