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Article Dans Une Revue Applied Physics Letters Année : 2012

Role of the Ge surface during the end of range dissolution

Résumé

Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy J. Appl. Phys. 112, 054903 (2012) Defect microstructural evolution in ion irradiated metallic nanofoils: Kinetic Monte Carlo simulation versus cluster dynamics modeling and in situ transmission electron microscopy experiments Appl. Phys. Lett. 101, 101905 (2012) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells J. Appl. Phys. 112, 033513 (2012) Analysis of doping induced wafer bow during GaN:Si growth on sapphire
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Dates et versions

hal-01921897 , version 1 (14-11-2018)

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S. Boninelli, G. Impellizzeri, A. Alberti, F. Priolo, Fuccio Cristiano, et al.. Role of the Ge surface during the end of range dissolution. Applied Physics Letters, 2012, 101 (16), pp.162103. ⟨10.1063/1.4759031⟩. ⟨hal-01921897⟩
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