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Article Dans Une Revue Sensors and Actuators A: Physical Année : 2000

Intrinsic thermal behaviour of capacitive pressure sensors: mechanisms and minimisation

Résumé

The thermal behaviour of capacitive pressure sensors fabricated using silicon and Pyrex wafers is analysed by combining the three-dimensional (3D) numerical modelling and the observation of a family of sensors. It is shown that the main mechanism of the capacitance thermal variations is structural deformation. In order to minimise the temperature coefficient, the wafer thickness must be optimised and the bonding area widened.

Dates et versions

hal-02045985 , version 1 (22-02-2019)

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G. Blasquez, X. Chauffleur, Patrick Pons, C Douziech, P Favaro, et al.. Intrinsic thermal behaviour of capacitive pressure sensors: mechanisms and minimisation. Sensors and Actuators A: Physical , 2000, 85 (1-3), pp.65-69. ⟨10.1016/S0924-4247(00)00369-1⟩. ⟨hal-02045985⟩
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