Thermal shot noise in top-gated single carbon nanotube field effect transistors - Physique Mésoscopique
Article Dans Une Revue Applied Physics Letters Année : 2010

Thermal shot noise in top-gated single carbon nanotube field effect transistors

Julien Chaste
Emiliano Pallecchi
Gwendal Fève
Takis Kontos
Jean-Marc Berroir
Bernard Plaçais

Résumé

The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of 1-dimensional nano-transistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of 13μe per square root of Hz in the 0.2–0.8 GHz band.
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Dates et versions

hal-00484988 , version 1 (19-05-2010)

Identifiants

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Julien Chaste, Emiliano Pallecchi, Pascal Morfin, Gwendal Fève, Takis Kontos, et al.. Thermal shot noise in top-gated single carbon nanotube field effect transistors. Applied Physics Letters, 2010, 96, pp.192103. ⟨10.1063/1.3425889⟩. ⟨hal-00484988⟩
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