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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2011

Transport scattering time probed through rf admittance of a graphene capacitor

Emiliano Pallecchi
Julien Chaste
Gwendal Fève
Benjamin Huard
Takis Kontos
Jean-Marc Berroir
Bernard Plaçais

Résumé

We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity, and diffusion constant are deduced from the low-frequency gate capacitance, its charging time, and their ratio. The admittance evolves from an rc-like to a skin-effect response at GHz frequency with a crossover given by the Thouless energy. The scattering time is found to be independent of energy in the 0- to 200-meV investigated range at room temperature. This is consistent with a random mass model for Dirac fermions.
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Dates et versions

hal-00657369 , version 1 (06-01-2012)

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  • HAL Id : hal-00657369 , version 1

Citer

Emiliano Pallecchi, Andreas Betz, Julien Chaste, Gwendal Fève, Benjamin Huard, et al.. Transport scattering time probed through rf admittance of a graphene capacitor. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (12), pp.125408. ⟨hal-00657369⟩
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