Les valeurs des paramètre issues de l'ajustement sont données dans le tableau 10.7. On constate grâcegrâcè a la figure 10.28 que cet ajustement, qui intègre un effet de température, permet de mieux décrire le comportement de la conductivitéconductivitéà T = 1.5 K par rapport au premier ajustement, montrant notamment que ln ? n'est pas tout fait linéaire avec ?1/I. De plus ,
New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance, représente les données expérimentales et théoriques, p.45494, 1980. ,
DOI : 10.1103/PhysRevLett.45.494
Unconventional quantum Hall effect and Berry???s phase of 2?? in bilayer graphene, Nature Physics, vol.392, issue.3, pp.177-180, 2006. ,
DOI : 10.1038/nphys245
Room-Temperature Quantum Hall Effect in Graphene, Science, vol.315, issue.5817, p.3151379, 2007. ,
DOI : 10.1126/science.1137201
Possible new effects in superconductive tunnelling, Physics Letters, vol.1, issue.7, pp.251-253, 1962. ,
DOI : 10.1016/0031-9163(62)91369-0
Josephson Currents in Superconducting Tunneling: The Effect of Microwaves and Other Observations, Physical Review Letters, vol.11, issue.2, p.80, 1963. ,
DOI : 10.1103/PhysRevLett.11.80
News from the BIPM, Metrologia, vol.26, issue.1, p.69, 1989. ,
DOI : 10.1088/0026-1394/26/1/006
Charge-Quantization Studies Using a Tunnel Capacitor, Physical Review Letters, vol.22, issue.25, p.1371, 1969. ,
DOI : 10.1103/PhysRevLett.22.1371
Observation of single-electron charging effects in small tunnel junctions, Physical Review Letters, vol.59, issue.1, p.109, 1987. ,
DOI : 10.1103/PhysRevLett.59.109
Single-Electron Pump Based on Charging Effects, Europhysics Letters (EPL), vol.17, issue.3, p.249, 1992. ,
DOI : 10.1209/0295-5075/17/3/011
Determination of the elementary charge and the quantum metrological triangle experiment, The European Physical Journal Special Topics, vol.172, issue.1, pp.267-296, 2009. ,
DOI : 10.1140/epjst/e2009-01054-2
Atomic masses and fundamental constants, 1976. ,
Determination of the Planck constant by means of a watt balance, The European Physical Journal Special Topics, vol.172, issue.1, pp.363-383, 2009. ,
DOI : 10.1140/epjst/e2009-01061-3
Determination of the unit of resistance and the von Klitzing constant R k based on a calculable capacitor, The European Physical Journal Special Topics, vol.172, issue.1, pp.257-266, 2009. ,
DOI : 10.1140/epjst/e2009-01053-3
CODATA recommended values of the fundamental physical constants: 2006, Reviews of Modern Physics, vol.80, issue.2, pp.633-730, 2008. ,
DOI : 10.1103/RevModPhys.80.633
Value and QED, Physical Review Letters, vol.97, issue.3, p.30802, 2006. ,
DOI : 10.1103/PhysRevLett.97.030802
Testing universality of the quantum Hall effect by means of the Wheatstone bridge, Journal of Applied Physics, vol.102, issue.5, p.54903, 2007. ,
DOI : 10.1063/1.2776371
Reproducibility of the quantum hall effect in GaAs/AlGaAs two dimensional electron gas, 2008 Conference on Precision Electromagnetic Measurements Digest, pp.22-23, 2008. ,
DOI : 10.1109/CPEM.2008.4574633
As/InP Heterostructures, Metrologia, vol.22, issue.2, pp.103-110, 1986. ,
DOI : 10.1088/0026-1394/22/2/005
Direct comparison of the quantized Hall resistance in gallium arsenide and silicon, Physical Review Letters, vol.66, issue.8, p.66969, 1991. ,
DOI : 10.1103/PhysRevLett.66.969
Electronic transport in mesoscopic systems, 1997. ,
Physique mésoscopique desélectronsdesélectrons et des photons, 2004. ,
Quantum Transport in Semiconductor Nanostructures, Semiconductor Heterostructures and Nanostructures, pp.1-228, 1991. ,
DOI : 10.1016/S0081-1947(08)60091-0
Four-Terminal Phase-Coherent Conductance, Physical Review Letters, vol.57, issue.14, p.1761, 1986. ,
DOI : 10.1103/PhysRevLett.57.1761
The quantum Hall effect, 2002. ,
DOI : 10.1007/978-3-662-05016-3
Resistance metrology based on the quantum Hall effect, The European Physical Journal Special Topics, vol.172, issue.1, p.39, 2009. ,
DOI : 10.1140/epjst/e2009-01051-5
Variable range hopping as the mechanism of the conductivity peak broadening in the quantum Hall regime, Physical Review Letters, vol.70, issue.24, p.3796, 1993. ,
DOI : 10.1103/PhysRevLett.70.3796
Electrostatics of edge channels, Physical Review B, vol.46, issue.7, p.4026, 1992. ,
DOI : 10.1103/PhysRevB.46.4026
Edge Strips in the Quantum Hall Regime Imaged by a Single-Electron Transistor, Physical Review Letters, vol.81, issue.8, p.811674, 1998. ,
DOI : 10.1103/PhysRevLett.81.1674
Hall potential profiles in the quantum Hall regime measured by a scanning force microscope, Physica B: Condensed Matter, vol.298, issue.1-4, pp.1-4562, 2001. ,
DOI : 10.1016/S0921-4526(01)00383-0
Conductivity-peak broadening in the quantum Hall regime, Physical Review B, vol.48, issue.15, p.11167, 1993. ,
DOI : 10.1103/PhysRevB.48.11167
Activated Conductivity in the Quantum Hall Effect, Physical Review Letters, vol.73, issue.8, p.1150, 1994. ,
DOI : 10.1103/PhysRevLett.73.1150
Electronic transport and the localization length in the quantum Hall effect, Physical Review B, vol.57, issue.23, p.14818, 1998. ,
DOI : 10.1103/PhysRevB.57.14818
Quantized Hall conductivity in two dimensions, Physical Review B, vol.23, issue.10, p.5632, 1981. ,
DOI : 10.1103/PhysRevB.23.5632
Quantized Hall conductance as a topological invariant, Physical Review B, vol.31, issue.6, p.313372, 1985. ,
DOI : 10.1103/PhysRevB.31.3372
Is the quantum hall effect influenced by the gravitational field ? Physical Review Letters, p.96804, 2004. ,
Dissipation and dynamic nonlinear behavior in the quantum hall regime Optimization of QHE-devices for metrological applications, Physical Review Letters IEEE Transactions on Instrumentation and Measurement, vol.51, issue.502, pp.1374218-222, 1983. ,
Behavior of the contacts of quantum Hall effect devices at high currents, Journal of Applied Physics, vol.96, issue.1, p.404, 2004. ,
DOI : 10.1063/1.1748853
High-precision measurements of the quantized Hall resistance:Experimental conditions for universality, Physical Review B, vol.55, issue.19, p.13124, 1997. ,
DOI : 10.1103/PhysRevB.55.13124
Revised technical guidelines for reliable dc measurements of the quantized Hall resistance, Metrologia, vol.40, issue.5, pp.217-223, 2003. ,
DOI : 10.1088/0026-1394/40/5/302
Two-dimensional atomic crystals, Proceedings of the National Academy of Sciences, vol.102, issue.30, pp.10451-10453, 2005. ,
DOI : 10.1073/pnas.0502848102
Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide, Carbon, vol.45, issue.7, pp.451558-1565, 2007. ,
DOI : 10.1016/j.carbon.2007.02.034
Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material, Nature Nanotechnology, vol.27, issue.5, pp.270-274, 2008. ,
DOI : 10.1038/nnano.2008.83
Processable aqueous dispersions of graphene nanosheets, Nature Nanotechnology, vol.80, issue.2, pp.101-105, 2008. ,
DOI : 10.1038/nnano.2007.451
Ultrathin Epitaxial Graphite:?? 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics, The Journal of Physical Chemistry B, vol.108, issue.52, pp.19912-19916, 2004. ,
DOI : 10.1021/jp040650f
Electronic Confinement and Coherence in Patterned Epitaxial Graphene, Science, vol.312, issue.5777, p.1125925, 2006. ,
DOI : 10.1126/science.1125925
Epitaxial graphene on ruthenium, Nature Materials, vol.90, issue.5, pp.406-411, 2008. ,
DOI : 10.1038/nmat2166
Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition, Nano Letters, vol.9, issue.1, pp.30-35, 2009. ,
DOI : 10.1021/nl801827v
Substrate-Free Gas-Phase Synthesis of Graphene Sheets, Nano Letters, vol.8, issue.7, pp.2012-2016, 2008. ,
DOI : 10.1021/nl8011566
Electronic properties of graphite: A unified theoretical study, Physical Review B, vol.25, issue.6, p.4126, 1982. ,
DOI : 10.1103/PhysRevB.25.4126
Intercalation compounds of graphite Advances in Physics, pp.1-186, 2002. ,
Berry's Phase and Absence of Back Scattering in Carbon Nanotubes, Journal of the Physical Society of Japan, vol.67, issue.8, pp.2857-2862, 1998. ,
DOI : 10.1143/JPSJ.67.2857
Sub- Poissonian shot noise in graphene, Physical Review Letters, issue.24, p.96246802, 2006. ,
Chiral tunnelling and the Klein paradox in??graphene, Nature Physics, vol.23, issue.9, pp.620-625, 2006. ,
DOI : 10.1038/nphys384
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer, Physical Review Letters, vol.96, issue.8, p.86805, 2006. ,
DOI : 10.1103/PhysRevLett.96.086805
Electronic properties of bilayer and multilayer graphene, Physical Review B, vol.78, issue.4, p.45405, 2008. ,
DOI : 10.1103/PhysRevB.78.045405
Electrons in bilayer graphene, Solid State Communications, vol.143, issue.1-2, pp.110-115, 2007. ,
DOI : 10.1016/j.ssc.2007.03.054
Making graphene visible, Applied Physics Letters, vol.91, issue.6, p.91063124, 2007. ,
DOI : 10.1063/1.2768624
Optical constants of graphene layers in the visible range, Applied Physics Letters, vol.94, issue.3, p.31901, 2009. ,
DOI : 10.1063/1.3073717
Fine Structure Constant Defines Visual Transparency of Graphene, Science, vol.320, issue.5881, p.3201308, 2008. ,
DOI : 10.1126/science.1156965
Double Resonant Raman Scattering in Graphite, Physical Review Letters, vol.85, issue.24, p.5214, 2000. ,
DOI : 10.1103/PhysRevLett.85.5214
Raman Spectrum of Graphene and Graphene Layers, Physical Review Letters, vol.97, issue.18, p.97187401, 2006. ,
DOI : 10.1103/PhysRevLett.97.187401
URL : https://hal.archives-ouvertes.fr/hal-00130091
Two-dimensional gas of massless Dirac fermions in graphene, Nature, vol.72, issue.7065, pp.438197-200, 2005. ,
DOI : 10.1103/PhysRevLett.79.3728
Carrier Transport in Two-Dimensional Graphene Layers, Physical Review Letters, vol.98, issue.18, p.98186806, 2007. ,
DOI : 10.1103/PhysRevLett.98.186806
Observation of electron???hole puddles in graphene using a scanning single-electron transistor, Nature Physics, vol.53, issue.2 ,
DOI : 10.1038/nature02230
A self-consistent theory for graphene transport, Proc. Natl. Acad. Sci. USA, p.18392, 2007. ,
DOI : 10.1073/pnas.0704772104
Numbers of donors and acceptors from transport measurements in graphene, Applied Physics Letters, vol.91, issue.10, p.102102, 2007. ,
DOI : 10.1063/1.2779107
Electronic transport in graphene: A semiclassical approach including midgap states, Physical Review B, vol.76, issue.20, p.205423, 2007. ,
DOI : 10.1103/PhysRevB.76.205423
Single-particle relaxation time versus transport scattering time in a two-dimensional graphene layer, Physical Review B, vol.77, issue.19, p.195412, 2008. ,
DOI : 10.1103/PhysRevB.77.195412
Ground State of Graphene in the Presence of Random Charged Impurities, Physical Review Letters, vol.101, issue.16, p.166803, 2008. ,
DOI : 10.1103/PhysRevLett.101.166803
Scattering of charge carriers by point defects in bilayer graphene, Physical Review B, vol.76, issue.7, p.73411, 2007. ,
DOI : 10.1103/PhysRevB.76.073411
Boltzmann transport and residual conductivity in bilayer graphene, Physical Review B, vol.77, issue.11, p.115436, 2008. ,
DOI : 10.1103/PhysRevB.77.115436
Theory of carrier transport in bilayer graphene, Physical Review B, vol.81, issue.16, p.161407, 2010. ,
DOI : 10.1103/PhysRevB.81.161407
Intrinsic and extrinsic performance limits of graphene devices on SiO2, Diffusive charge transport in graphene on SiO2. Solid State Communications, pp.206-20927, 2008. ,
DOI : 10.1038/nnano.2008.58
Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer, Physical Review Letters, vol.100, issue.1, p.16602, 2008. ,
DOI : 10.1103/PhysRevLett.100.016602
Low???energy ion bombardment of silicon dioxide films on silicon, Journal of Applied Physics, vol.44, issue.5, p.2008, 1973. ,
DOI : 10.1063/1.1662507
Electronic properties of two-dimensional systems, Reviews of Modern Physics, vol.54, issue.2, p.437, 1982. ,
DOI : 10.1103/RevModPhys.54.437
Metallicity and its low-temperature behavior in dilute two-dimensional carrier systems, Physical Review B, vol.69, p.195305, 2004. ,
Quantum hall effect in a Gate-Controlled p-n junction of graphene Electronic transport in locally gated graphene nanoconstrictions, Science Applied Physics Letters, issue.5838, pp.317638-641, 2007. ,
Current saturation in zero-bandgap, top-gated graphene field-effect transistors, Nature Nanotechnology, vol.97, issue.11, pp.654-659, 2008. ,
DOI : 10.1038/nnano.2008.268
Boron nitride substrates for high-quality graphene electronics, Nature Nanotechnology, vol.104, issue.10, pp.722-726, 2010. ,
DOI : 10.1038/nnano.2010.172
Effect of a high-kappa environment on charge carrier mobility in graphene, Physical Review Letters, issue.20, p.102206603, 2009. ,
Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering, Physical Review Letters, vol.101, issue.14, p.146805, 2008. ,
DOI : 10.1103/PhysRevLett.101.146805
Charged impurity scattering in bilayer graphene, Physical Review B, vol.82, issue.4, p.41406, 2010. ,
DOI : 10.1103/PhysRevB.82.041406
Elastic scattering theory and transport in graphene, Physical Review B, vol.76, issue.24, p.245435, 2007. ,
DOI : 10.1103/PhysRevB.76.245435
Transport and Elastic Scattering Times as Probes of the Nature of Impurity Scattering in Single-Layer and Bilayer Graphene, Physical Review Letters, vol.104, issue.12, p.126801, 2010. ,
DOI : 10.1103/PhysRevLett.104.126801
Controlled ripple texturing of suspended graphene and ultrathin graphite membranes, Nature Nanotechnology, vol.76, issue.9, pp.562-566, 2009. ,
DOI : 10.1038/nnano.2009.191
The structure of suspended graphene sheets, Nature, vol.24, issue.7131, pp.44660-63, 2007. ,
DOI : 10.1038/nature05545
On the roughness of single- and bi-layer graphene membranes, Solid State Communications, vol.143, issue.1-2, pp.101-109, 2007. ,
DOI : 10.1016/j.ssc.2007.02.047
Electron scattering on microscopic corrugations in graphene, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.438, issue.7065, pp.195-204, 1863. ,
DOI : 10.1038/nature04235
Scattering mechanisms and Boltzmann transport in graphene, Physica E : Low-dimensional Systems and Nanostructures, p.10221025, 2008. ,
DOI : 10.1016/j.physe.2007.09.064
Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene, Physical Review B, vol.77, issue.11, p.115449, 2008. ,
DOI : 10.1103/PhysRevB.77.115449
Electron Scattering from Surface Excitations, Physical Review B, vol.6, issue.12, p.4517, 1972. ,
DOI : 10.1103/PhysRevB.6.4517
Remote polar phonon scattering in silicon inversion layers, Solid State Communications, vol.30, issue.12, pp.797-799, 1979. ,
DOI : 10.1016/0038-1098(79)90051-6
Approaching ballistic transport in suspended graphene, Nature Nanotechnology, vol.146, issue.8, pp.491-495, 2008. ,
DOI : 10.1038/nnano.2008.199
Ultrahigh electron mobility in suspended graphene, Solid State Communications, vol.146, issue.9-10, pp.9-10351, 2008. ,
DOI : 10.1016/j.ssc.2008.02.024
Charge transport and inhomogeneity near the minimum conductivity point in graphene, Physical Review B, vol.77, issue.8, p.81402, 2008. ,
DOI : 10.1103/PhysRevB.77.081402
Evidence of the role of contacts on the observed electron-hole asymmetry in graphene, Physical Review B, vol.78, issue.12, p.78121402, 2008. ,
DOI : 10.1103/PhysRevB.78.121402
URL : https://hal.archives-ouvertes.fr/hal-00520826
Measurement of Scattering Rate and Minimum Conductivity in Graphene, Physical Review Letters, vol.99, issue.24, p.99246803, 2007. ,
DOI : 10.1103/PhysRevLett.99.246803
Strong-field magnetotransport of two-phase disordered media in two and three dimensions: Exact and approximate results, Physical Review B, vol.74, issue.9, p.94423, 2006. ,
DOI : 10.1103/PhysRevB.74.094423
Model for a macroscopically disordered conductor with an exactly linear high-field magnetoresistance, Physical Review B, vol.71, issue.20, p.201304, 2005. ,
DOI : 10.1103/PhysRevB.71.201304
Magnetoresistance and Hall effect in a disordered two-dimensional electron gas, Physical Review B, vol.22, issue.11, p.5142, 1980. ,
DOI : 10.1103/PhysRevB.22.5142
Weak-Localization Magnetoresistance and Valley Symmetry in Graphene, Physical Review Letters, vol.97, issue.14, p.97146805, 2006. ,
DOI : 10.1103/PhysRevLett.97.146805
Strong Suppression of Weak Localization in Graphene, Physical Review Letters, vol.97, issue.1, 2006. ,
DOI : 10.1103/PhysRevLett.97.016801
Magnetoresistance in single-layer graphene: weak localization and universal conductance fluctuation studies, Journal of Physics: Condensed Matter, vol.22, issue.20, p.22205301, 2010. ,
DOI : 10.1088/0953-8984/22/20/205301
Influence of Trigonal Warping on Interference Effects in Bilayer Graphene, Physical Review Letters, vol.98, issue.17, p.98176806, 2007. ,
DOI : 10.1103/PhysRevLett.98.176806
Weak Localization in Bilayer Graphene, Physical Review Letters, vol.98, issue.17, p.98176805, 2007. ,
DOI : 10.1103/PhysRevLett.98.176805
Negative and positive magnetoresistance in bilayer graphene: Effects of weak localization and charge inhomogeneity, Physica B: Condensed Matter, vol.406, issue.4, p.906, 2009. ,
DOI : 10.1016/j.physb.2010.11.093
Effects of electron-electron collisions with small energy transfers on quantum localisation Journal of Physics C : Solid State Physics Experimental observation of the quantum hall effect and berry's phase in graphene, Nature, vol.15117, issue.367065, pp.7367-438201, 1982. ,
Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene, Nature, vol.78, issue.7270, pp.462192-195, 2009. ,
DOI : 10.1038/nature08522
Observation of the fractional quantum hall effect in graphene, Nature, issue.7270, pp.462196-199, 2009. ,
Half integer quantum Hall effect in high mobility single layer epitaxial graphene, Applied Physics Letters, vol.95, issue.22, p.95223108, 2009. ,
DOI : 10.1063/1.3266524
URL : https://hal.archives-ouvertes.fr/hal-01002933
Substrateinduced band gap in graphene on hexagonal boron nitride : Ab initio density functional calculations, Physical Review B, issue.7, p.76073103, 2007. ,
Doping Graphene with Metal Contacts, Physical Review Letters, vol.101, issue.2, p.26803, 2008. ,
DOI : 10.1103/PhysRevLett.101.026803
Effect of contact induced states on minimum conductivity in graphene, Physical Review B, vol.79, issue.8, p.85410, 2009. ,
DOI : 10.1103/PhysRevB.79.085410
Nonlinear screening of charges induced in graphene by metal contacts, Physical Review B, vol.82, issue.11, p.115437, 2010. ,
DOI : 10.1103/PhysRevB.82.115437
Role of contacts in graphene transistors: A scanning photocurrent study, Physical Review B, vol.79, issue.24, p.245430, 2009. ,
DOI : 10.1103/PhysRevB.79.245430
Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point, Solid State Communications, vol.149, issue.27-28, pp.27-281068, 2009. ,
DOI : 10.1016/j.ssc.2009.02.039
Contact resistance in graphene-based devices, Physica E : Low-dimensional Systems and Nanostructures, pp.677-679, 2010. ,
DOI : 10.1016/j.physe.2009.11.080
Current-induced cleaning of graphene, Applied Physics Letters, vol.91, issue.16, p.91163513, 2007. ,
DOI : 10.1063/1.2789673
Scaling of the quantum Hall plateau-plateau transition in graphene, Physical Review B, vol.80, issue.24, p.80241411, 2009. ,
DOI : 10.1103/PhysRevB.80.241411
Unveiling quantum hall transport by Efros-Shklovskii to mott variable range hopping transition with graphene. 1009, p.1795, 2010. ,
URL : https://hal.archives-ouvertes.fr/cea-01073043
Breakdown of the quantum Hall effect due to electron heating, Solid State Communications, vol.54, issue.6, pp.479-484, 1985. ,
DOI : 10.1016/0038-1098(85)90651-9
Bistability in the current-induced breakdown of the quantum Hall effect, Semiconductor Science and Technology, vol.8, issue.12, p.2062, 1993. ,
DOI : 10.1088/0268-1242/8/12/005
Evidence of Nonlocal Breakdown of the Integer Quantum Hall Effect, Physical Review Letters, vol.77, issue.3, p.558, 1996. ,
DOI : 10.1103/PhysRevLett.77.558
Field distribution in a quantum Hall device, Journal of Physics C: Solid State Physics, vol.18, issue.33, p.6211, 1985. ,
DOI : 10.1088/0022-3719/18/33/011
Electron-phonon interactions and the breakdown of the dissipationless quantum Hall effect, Physical Review B, vol.30, issue.6, p.3016, 1984. ,
DOI : 10.1103/PhysRevB.30.3016
Heating of two-dimensional electrons by a high electric field in a quantizing magnetic field: Consequences in Landau emission and in the quantum Hall effect, Physical Review B, vol.52, issue.15, p.5211178, 1995. ,
DOI : 10.1103/PhysRevB.52.11178
The quantum Hall effect as an electrical resistance standard, Reports on Progress in Physics, vol.64, issue.12, p.1603, 2001. ,
DOI : 10.1088/0034-4885/64/12/201
Nonequilibrium occupation of Landau levels and universal critical field in the quantum-Hall-effect breakdown, Physical Review B, vol.58, issue.19, p.13015, 1998. ,
DOI : 10.1103/PhysRevB.58.13015
Nonequilibrium breakdown of quantum Hall state in graphene, Physical Review B, vol.80, issue.8, p.81404, 2009. ,
DOI : 10.1103/PhysRevB.80.081404
As one-dimensional channel, Physical Review B, vol.44, issue.4, p.1938, 1991. ,
DOI : 10.1103/PhysRevB.44.1938
Fluctuations and Evidence for Charging in the Quantum Hall Effect, Physical Review Letters, vol.82, issue.23, p.4695, 1999. ,
DOI : 10.1103/PhysRevLett.82.4695
Evolution of microscopic localization in graphene in a magnetic field from scattering resonances to quantum dots, Nature Physics, vol.345, issue.3, pp.245-251, 2011. ,
DOI : 10.1103/PhysRevB.72.075413
Quantum resistance metrology in graphene, Applied Physics Letters, vol.93, issue.22, p.93222109, 2008. ,
DOI : 10.1063/1.3043426
Towards a quantum resistance standard based on epitaxial graphene, Nature Nanotechnology, vol.36, issue.3, pp.186-189, 2010. ,
DOI : 10.1038/nmat2382