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Design and modeling of mm-wave integrated transformers in CMOS and BiCMOS technologies

Abstract : Millimeter-wave wireless communication systems have considerably gained in importance in recent years. Important applications as 60-GHz WLANs and WPANs, 80- GHz automotive radar, and 94 GHz imaging have emerged, requiring significant effort on the design of transceiver's silicon-based integrated circuits. In this context, integrated transformers are of a particular interest. They may perform, among other functions, impedance matching, single to differential conversion, and power combination. The design and modeling of this type of transformers is the subject of this thesis. A comprehensive study on the topology of transformers is presented, regarding the layout of individual coils, their relative position, geometric dimensions, substrate shields, and the achievement of high transformation ratios. Their modeling through electromagnetic simulations and a lumped-element electric circuit is discussed as well. The model presents a 2-π topology and analytical equations depending on both technological and geometric characteristics to evaluate the totality of its components. A close agreement between model and measurement is shown for 65-nm CMOS and 130-nm BiCMOS transformers up to 110 GHz. Those transformers are then applied to the design of a 77-GHz BiCMOS mixer and a 60-GHz CMOS power amplifier.
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Contributor : Bernardo Leite Connect in order to contact the contributor
Submitted on : Wednesday, February 8, 2012 - 11:39:57 AM
Last modification on : Friday, October 23, 2020 - 4:40:26 PM
Long-term archiving on: : Wednesday, May 9, 2012 - 2:30:38 AM


  • HAL Id : tel-00667744, version 1


Bernardo Leite. Design and modeling of mm-wave integrated transformers in CMOS and BiCMOS technologies. Electronique. Université Sciences et Technologies - Bordeaux I, 2011. Français. ⟨NNT : ⟩. ⟨tel-00667744⟩



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