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Analyse de procédés de traitement plasma des résines photosensibles à 193 nm pour le développement de technologies CMOS sub-65 nm

Abstract : This work focuses on the study of the interactions between plasmas used in microelectronic processes and chemically amplified photoresists. The fabrication processes in microelectronic requires the use of organic polymers. In a first time, these materials are used to define the geometry of the final device during a lithography step. In the following of the fabrication process, the resist acts as a mask to allow selective treatment of the substrate underneath. One of these treatments is dry etching, a step which is used to transfer resist patterns into the substrate. As a consequence, the photoresists must be sufficiently resistant in order to correctly fulfill there role as etch mask. The main objective of this work has been to deeply investigate the dry etch resistance of chemically amplified resists, and to propose a way to improve their stability during typical dry etch steps. We have studied the degradation of 193 nm photoresists exposed to various etch chemistries. Several characterization techniques employed (FTIR, XPS, DSC and TGA) have highlighted the weaknesses of 193 nm resists chemistries, due to their acrylic structures. Controlling the resist degradations during etch being a major issue, we have deeply investigated the possibility of improving the resist etch behaviour by using plasma treatments prior to etching. These treatments are commonly referred to as "plasma cures". The specific modifications of the resist caused by these treatments have been clearly shown, and the major role played by the plasma UV emissions has been demonstrated. Finally these treatments have been applied to resist profiles in order to show their strong potential in terms of industrial applications for sub-65 nm CMOS technologies. A positive effect has been shown on two major issues: the resist etch rate and the Line Width Roughness (LWR).
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Submitted on : Thursday, February 9, 2012 - 1:38:54 PM
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  • HAL Id : tel-00668121, version 1

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Arnaud Bazin. Analyse de procédés de traitement plasma des résines photosensibles à 193 nm pour le développement de technologies CMOS sub-65 nm. Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2009. Français. ⟨NNT : ⟩. ⟨tel-00668121⟩

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