Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors, Appl. Phys. Lett, pp.69-3857, 1996. ,
« Seeded solid phase crystallization of amorphous silicon films with embedded nanocrystals, Mater. Res. Soc. Symp. Proc, pp.1066-185, 2008. ,
Laser crystallized multicrystalline silicon thin films on glass, Laser crystallized multicrystalline silicon thin films on glass, pp.77-80, 2005. ,
DOI : 10.1016/j.tsf.2005.01.082
« Surface rippling induced by surfacetension gradients during laser surface melting and alloying, J. Appl. Phys, p.48, 1977. ,
« Simulation of explosive crystallisation in pulsed laser irradiation aSi, J. Phys. D: Appl. Phys, pp.22-693, 1988. ,
Low-energy (2-5 keV) argon damage in silicon, Journal of Physics D: Applied Physics, vol.19, issue.4, pp.589-603, 1986. ,
DOI : 10.1088/0022-3727/19/4/013
Explosive crystallization in single???crystal silicon amorphized by implantation, Journal of Applied Physics, vol.54, issue.1, pp.54-395, 1983. ,
DOI : 10.1063/1.331716
A raman study of TiO2-SiO2 glasses prepared by sol-gel processes, Journal of Materials Science Letters, vol.8, issue.8, pp.994-998, 1985. ,
DOI : 10.1007/BF00721102
« Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas », United States Patent, pp.330-3630518, 1982. ,
« Heat transfer during a cw laser crystallisation process of a silicon thin film on a glass substrate, Excerpt from the Proceedings of the COMSOL Multiphysics User's Conference, 2005. ,
Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering, Physical Review B, vol.16, issue.8, pp.3556-3571, 1977. ,
DOI : 10.1103/PhysRevB.16.3556
Electrically active defects in shallow pre-amorphisedp + n junctions in silicon, Electrically Active Defects in Shallow Junctions in Silicon », pp.173-184, 1989. ,
DOI : 10.1007/BF02657405
« Plycristalline silicon thin film solar cells prepared by PECVDSPC », International Journal of Hydrogen Energy, vol.33, pp.3522-3525, 2008. ,
Cw laser crystallization of glow discharge a-Si:H on glass substrates, Journal of Electronic Materials, vol.126, issue.2, pp.303-320, 1982. ,
DOI : 10.1007/BF02654674
-Si: H, Molecular hydrogen in aSi: H », pp.1435-1438, 1982. ,
DOI : 10.1103/PhysRevB.25.1435
URL : https://hal.archives-ouvertes.fr/hal-01147992
Quantification of multiple twinning in face centred cubic materials, Acta Materialia, vol.59, issue.1, pp.252-262, 2011. ,
DOI : 10.1016/j.actamat.2010.09.029
-type Si. II. Optical Modes, Physical Review B, vol.8, issue.10, p.4734, 1973. ,
DOI : 10.1103/PhysRevB.8.4734
« Hydrogen precipitation in highly oversaturated singlecrystalline silicon, Physica Status Solidi, pp.150-539, 1995. ,
« Nonequilibrium model of laserinduced phase change processes in amorphous silicon thin films, Phys. Rev. B, vol.5, 1998. ,
Use of selective annealing for growing very large grain silicon on insulator films, Applied Physics Letters, vol.41, issue.4, pp.346-347, 1982. ,
DOI : 10.1063/1.93507
Instability at the melting threshold of laser-irradiated silicon, Physical Review B, vol.29, issue.11, pp.6393-6395, 1984. ,
DOI : 10.1103/PhysRevB.29.6393
Chemical Vapor Deposited Polycrystalline Silicon, Chemical Vapor Deposited Polycrystalline Silicon, pp.1565-1570, 1972. ,
DOI : 10.1149/1.2404043
Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin???film transistor structures, Applied Physics Letters, vol.56, issue.12, pp.56-1140, 1990. ,
DOI : 10.1063/1.102543
Heat of crystallization and melting point of amorphous silicon, Applied Physics Letters, vol.42, issue.8, pp.42-698, 1983. ,
DOI : 10.1063/1.94077
Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation, Journal of Applied Physics, vol.57, issue.6, pp.1795-1804, 1985. ,
DOI : 10.1063/1.334406
Excimer laser and rapid thermal annealing stimulation of solid-phase nucleation and crystallization in amorphous silicon films on glass substrates, Journal of Physics: Condensed Matter, vol.8, issue.3, pp.273-286, 1996. ,
DOI : 10.1088/0953-8984/8/3/007
Allen, « Thermal Expansion and Grüneisen Parameters of Amorphous Silicon: A Realistic Model Calculation, Phys. Rev. Lett, pp.79-1885, 1997. ,
« Laser crystallization a way to produce crystalline silicon films on glass or on polymer substrates, Journal of Crystal Growth, vol.287, pp.397-401, 2006. ,
« Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge 1?x Si x alloys determined by scanning calorimetry, J. Appl. Phys, pp.52-4003, 1981. ,
« Method of crystallizing amorphous material with a moving energy beam », United States Patent, 1982. ,
« Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof », United States Patent, pp.59-461, 1977. ,
Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition, Thin Solid Films, vol.383, issue.1-2, pp.172-177, 2001. ,
DOI : 10.1016/S0040-6090(00)01628-X
« LongPulse Excimer Laser Crystallization and Doping for the Fabrication of High Performance Polysilicon TFTs, Journal of the Korean Physical Society, vol.4, pp.8-40, 2006. ,
cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties, CW laser anneal of polycrystalline silicon: Crystalline structure, electrical properties, pp.775-778, 1978. ,
DOI : 10.1063/1.90501
Stability of structural defects of polycrystalline silicon grown by rapid thermal annealing of amorphous silicon films, Thin Solid Films, vol.268, issue.1-2, pp.1-4, 1995. ,
DOI : 10.1016/0040-6090(95)06677-2
Thermal Conductivity of Silicon and Germanium from 3??K to the Melting Point, Physical Review, vol.134, issue.4A, pp.1058-1069, 1964. ,
DOI : 10.1103/PhysRev.134.A1058
Excimer laser crystallization and doping of aSi films sputtered below 100 C, Proceedings of AMLCD, pp.51-54, 1997. ,
Enhanced crystallinity of silicon films deposited by CVD on liquid layers (CVDOLL process): Silicon on tin layers in the presence of hydrogen chloride, Journal of Applied Physics, vol.48, issue.9, pp.48-3937, 1977. ,
DOI : 10.1063/1.324268
The Influence of Grain Size and Dopant Concentration on the Electrical Properties of Polycrystalline Silicon Films, Second European Conference PVSEC, pp.65-74, 1979. ,
DOI : 10.1007/978-94-009-9487-4_9
Thermodynamic properties of amorphous silicon investigated by pulsed laser heating, Thermodynamic Properties of Amorphous Silicon Investigated by Pulsed Laser Heating, pp.141-151, 1992. ,
DOI : 10.1007/BF00503362
Explosive crystallization in the presence of melting, Explosive crystallization in the presence of melting, pp.184125-184126, 2006. ,
DOI : 10.1103/PhysRevB.73.184125
Surface Tension Gradients Induced by Temperature: The Thermal Marangoni Effect, Journal of Chemical Education, vol.81, issue.6, 19530. ,
DOI : 10.1021/ed081p824
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces, Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces, pp.8234-8243, 1988. ,
DOI : 10.1103/PhysRevB.37.8234
New crystalline silicon ribbon materials for photovoltaics, Journal of Physics: Condensed Matter, vol.16, issue.50, pp.1615-1648, 2004. ,
DOI : 10.1088/0953-8984/16/50/R03
Economou, « Mode of growth and microstructure of polycrystalline silicon obtained by solidphase crystallization of an amorphous silicon film, J. Appl. Phys, pp.75-3944, 1994. ,
Large grain polycrystalline silicon by low???temperature annealing of low???pressure chemical vapor deposited amorphous silicon films, Journal of Applied Physics, vol.63, issue.7, pp.63-2260, 1988. ,
DOI : 10.1063/1.341065
Agglomeration of amorphous silicon film with high energy density excimer laser irradiation, Thin Solid Films, vol.515, issue.5, 2007. ,
DOI : 10.1016/j.tsf.2006.08.019
« Temperature dependent refractive index of amorphous silicon determined by timeresolved reflectivity during low fluence excimer laser heating, J. Appl. Phys, pp.99-063516, 2006. ,
Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films, Applied Physics Letters, vol.63, issue.14, p.63, 1993. ,
DOI : 10.1063/1.110617
Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films, Japanese Journal of Applied Physics, vol.37, issue.Part 1, No. 3A, pp.37-731, 1998. ,
DOI : 10.1143/JJAP.37.731
/Si structures, Applied Physics Letters, vol.65, issue.20, 1994. ,
DOI : 10.1063/1.112606
« Recrystallization of amorphized polycrystalline silicon films on SiO 2 : Temperature dependence of the crystallization parameters, Appl. Phys, pp.62-1675, 1987. ,
KINETICS OF SOLIDIFICATION, Kinetics of solidification, p.473, 1956. ,
DOI : 10.1139/p56-054
Lowndes, « Measurements of the optical properties of liquid silicon and germanium using nanosecond timeresolved ellipsometry, Appl. Phys. Lett, pp.51-352, 1987. ,
Grain-boundary states and hydrogenation of fine-grained polycrystalline silicon films deposited by molecular beams, Philosophical Magazine Part B, vol.31, issue.2, pp.443-455, 1991. ,
DOI : 10.1016/0038-1098(87)90181-5
« EFG Ribbon Technology R&D for Large Scale Photovoltaic Manufacturing, the Proc. of NCPV and Solar Program Review Meeting, 2003. ,
Surface Stabilization of Polycrystalline-Silicon Films during Laser Recrystallization, Journal of The Electrochemical Society, vol.128, issue.8, p.1824, 1981. ,
DOI : 10.1149/1.2127741
Transient nucleation in condensed systems, The Journal of Chemical Physics, vol.79, issue.12, pp.79-6261, 1983. ,
DOI : 10.1063/1.445731
« Largegrain polycrystalline silicon film by sequential lateral solidification on a plastic substrate, Thin Solid Films, vol.493, 2005. ,
Temperature and thickness effects on the explosive crystallization of amorphous germanium films, Applied Physics Letters, vol.40, issue.8, pp.40-672, 1982. ,
DOI : 10.1063/1.93223
Kinetics of laserinduced solid phase epitaxy in amorphous silicon films, J. Appl. Phys, pp.53-921, 1981. ,
Hatalis, « Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates, Journal of Electronic Materials, vol.28, 1999. ,
Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon, Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon, pp.13367-13377, 1992. ,
DOI : 10.1103/PhysRevB.45.13367
Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of p-type crystalline silicon surfaces, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.2, pp.530-543, 1998. ,
DOI : 10.1116/1.581095
Periodic regrowth phenomena produced by laser annealing of ion???implanted silicon, Applied Physics Letters, vol.32, issue.9, pp.32-535, 1978. ,
DOI : 10.1063/1.90119
Kamins, « Thin film MOSFET's fabricated in laserannealed polycrystalline silicon, Appl. Phys. Lett, pp.35-173, 1979. ,
« Low temperature polySi thin film transistor fabrication by metalinduced lateral crystallization, IEEE Electron Device Letters, vol.17, pp.160-162, 1996. ,
Solidphase crystallization of evaporated silicon thin films on glass for photovoltaics: A combined SEM and TEM study », Thin Film Solar Technology, Proc. of SPIE, pp.7409-740906, 2009. ,
Knights, « Structural interpretation of the vibrational spectra of aSi:H alloys, Phys. Rev. B, vol.19, 1979. ,
« The effect of the film H content on the crystallization of laser processed and thermally annealed HWCVD aSi:H », Phys. Status Solidi C, vol.7, pp.596-599, 2010. ,
Crystallization mechanisms in laser irradiated thin amorphous silicon films, Thin Solid Films, vol.427, issue.1-2, pp.91-95, 2003. ,
DOI : 10.1016/S0040-6090(02)01254-3
Kinetics of decomposition of amorphous hydrogenated silicon films, Journal of Applied Physics, vol.50, issue.8, pp.50-5238, 1979. ,
DOI : 10.1063/1.326672
Mise au point d'une technologie de cristallisation de silicium par laser argon continu. Application à la réalisation de transistors en couches minces, Thèse de l'Université de Rennes 1, 2004. ,
Cw argon laser crystallization of silicon films: Structural properties, Journal of Non-Crystalline Solids, vol.352, issue.9-20, pp.998-1002, 2006. ,
DOI : 10.1016/j.jnoncrysol.2005.11.121
URL : https://hal.archives-ouvertes.fr/hal-00776201
Hendel, « Temperature profiles induced by a scanning cw laser beam, Appl. Phys, pp.53-4364, 1982. ,
« Shortpulse laserinduced crystallization of intrinsic and hydrogenated amorphous germanium thin films, J. Appl. Phys, pp.82-5159, 1997. ,
Grain-boundary defects in laser-crystallized polycrystalline silicon, Grainboundary defects in laser crystallized polycrystalline silicon, pp.12065-12068, 1997. ,
DOI : 10.1103/PhysRevB.56.12065
« Effects of partial evolution of H from aSi:H on the infrared vibrational spectra and the photoluminescence, Journal of Non Crystalline Solids, vol.35, pp.36-231, 1980. ,
Kinetic analysis of hydrogen evolution from reactively sputtered amorphous silicon-hydrogen alloys, Physical Review B, vol.22, issue.12, pp.6213-6221, 1980. ,
DOI : 10.1103/PhysRevB.22.6213
Kinetics of solid phase crystallization in amorphous silicon, Materials Science Reports, vol.3, issue.1, pp.1-77, 1988. ,
DOI : 10.1016/S0920-2307(88)80005-7
« CW laser crystallization of amorphous silicon; dependence of amorphous silicon thickness and pattern width on the grain size, Thin Solid Films, vol.511, issue.512, pp.243-247, 2006. ,
Electronic Structure of Amorphous Si from Photoemission and Optical Studies, Electronic Structure of Amorphous Si from Photoemission and Optical Studies, pp.3017-3029, 1972. ,
DOI : 10.1103/PhysRevB.5.3017
« Optical determination of the mass density of amorphous and microcrystalline silicon layers with different hydrogen contents, Journal of NonCrystalline Solids, vol.227, issue.876, 1998. ,
« Silicon epitaxy by solidphase crystallization of deposited amorphous films, Appl. Phys. Lett, pp.31-689, 1977. ,
Hydrogenated amorphous silicon: Hydrogen content, bonding configurations and morphology in sputter-deposited, in-chamber annealed thin films, Thin Solid Films, vol.251, issue.1, pp.30-35, 1994. ,
DOI : 10.1016/0040-6090(94)90836-2
Bond switching, Si-H cluster formation and hydrogen effusion upon thermal annealing in hydrogenated amorphous silicon thin films, Thin Solid Films, vol.271, issue.1-2, pp.151-156, 1995. ,
DOI : 10.1016/0040-6090(96)80089-7
Largegrain polycrystalline silicon thin films obtained by lowtemperature stepwise annealing of hydrogenated amorphous silicon », Thin Solid Fitms, pp.310-67, 1997. ,
« Microstructure characterization in dc sputtered a SiC:H films by inert gas effusion measurements, Journal of NonCrystalline Solids, vol.338, issue.340, pp.517-520, 2004. ,
« Pulsed lasetinduced melting followed by quenching of silicon films, J. Appl. Phys, pp.74-6592, 1993. ,
« Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using DiamondLike Carbon as Photoabsorption Layer, J. J, 2007. ,
« Unifying model of thermal and lightinduced degradations of aSi:H, Sol. Energy Mater, pp.20-189, 1990. ,
phosphorus???doped amorphous silicon films deposited at low pressure, Journal of Applied Physics, vol.76, issue.9, pp.76-5492, 1994. ,
DOI : 10.1063/1.357167
Manufacturing technology for ribbon silicon (EFG) wafers and solar cells, Progress in Photovoltaics: Research and Applications, vol.141, issue.2, pp.129-140, 2002. ,
DOI : 10.1002/pip.411
Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon, Semiconductor Science and Technology, vol.8, issue.9, pp.1687-1691, 1993. ,
DOI : 10.1088/0268-1242/8/9/001
Thermal conductivity of diamond-like carbon films, Thermal conductivity of diamondlike carbon films, pp.161921-161922, 2006. ,
DOI : 10.1063/1.2362601
Monohydride clustering in the amorphous silicon matrix, Monohydride clustering in the amorphous silicon matrix, pp.65-72, 1999. ,
DOI : 10.1016/S0022-3093(99)00018-6
Optimization of layered laser crystallization for thin-film crystalline silicon solar cells, Solar Energy Materials and Solar Cells, vol.74, issue.1-4, pp.295-303, 2002. ,
DOI : 10.1016/S0927-0248(02)00088-0
Transient structural relaxation of amorphous silicon, Journal of Non-Crystalline Solids, vol.99, issue.2-3, pp.308-323, 1988. ,
DOI : 10.1016/0022-3093(88)90439-5
Variable strain energy in amorphous silicon, Variable strain energy in amorphous silicon, pp.1201-1207, 1988. ,
DOI : 10.1557/JMR.1988.1201
Explosive crystallization of amorphous silicon: triggering and propagation, Applied Surface Science, vol.43, issue.1-4, pp.43-128, 1989. ,
DOI : 10.1016/0169-4332(89)90201-8
Experimental test of kinetic theories for heterogeneous freezing in silicon, Physical Review B, vol.47, issue.1, pp.5-13, 1993. ,
DOI : 10.1103/PhysRevB.47.5
-Si:H, Physical Review B, vol.43, issue.3, pp.2454-2457, 1991. ,
DOI : 10.1103/PhysRevB.43.2454
URL : https://hal.archives-ouvertes.fr/hal-01408938
The use of beam shaping to achieve large???grain cw laser???recrystallized polysilicon on amorphous substrates, Applied Physics Letters, vol.39, issue.6, pp.39-498, 1981. ,
DOI : 10.1063/1.92773
Controled twostep solidphase crystallization for highperformance polysilicon TFT's, IEEE Electron Device Letters, vol.18, pp.378-381, 1997. ,
Spectral optical functions of silicon in the range of 1.134.96 eV at elevated temperatures, Int. J. Heat Mass transfer, pp.40-1591, 1996. ,
Influences of hydrogen contents in precursor Si film to excimer laser crystallization, Applied Physics A: Materials Science & Processing, vol.69, issue.7, pp.263-266, 1999. ,
DOI : 10.1007/s003390051396
determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry, Physical Review B, vol.72, issue.20, pp.205117-205118, 2005. ,
DOI : 10.1103/PhysRevB.72.205117
Chew « Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation, Phys. Rev. Lett, pp.52-2360, 1984. ,
Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films, Journal of Applied Physics, vol.85, issue.11, pp.7914-7918, 1999. ,
DOI : 10.1063/1.370607
Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated silicon, Solar Energy Materials, vol.1, issue.1-2, pp.29-42, 1979. ,
DOI : 10.1016/0165-1633(79)90054-6
« Physical model for the evaluation of solidliquid interfacial tension in silicon, J. Appl. Phys, pp.90-750, 2001. ,
A thermal description of the melting of c- and a-silicon under pulsed excimer lasers, Applied Surface Science, vol.36, issue.1-4, pp.1-11, 1989. ,
DOI : 10.1016/0169-4332(89)90894-5
URL : https://hal.archives-ouvertes.fr/in2p3-00016182
Location-Controlled Large-Grains in Near-Agglomeration Excimer-Laser Crystallized Silicon Films, MRS Proceedings, vol.621, p.621, 2000. ,
DOI : 10.1143/JJAP.33.4491
A fixed grid numerical modelling methodology for convection-diffusion mushy region phase-change problems, International Journal of Heat and Mass Transfer, vol.30, issue.8, pp.1709-1719, 1987. ,
DOI : 10.1016/0017-9310(87)90317-6
« Laserbeam interactions with materials: physical principles and applications, 1995. ,
« Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low pressure chemical vapor ? deposition, J. Appl. Phys, pp.78-6999, 1995. ,
Reinterpretation of the silicon-hydrogen stretch frequencies in amorphous silicon, Reinterpretation of the siliconhydrogen stretch frequencies in amorphous silicon, pp.585-587, 1983. ,
DOI : 10.1016/0038-1098(83)90520-3
« Hydrogen as the cause of pit formation during laser recrystallization of silicon on insulator films ? ?, J. App. Phys, pp.66-4444, 1989. ,
Gas Incorporation into Sputtered Films, Journal of Applied Physics, vol.38, issue.10, pp.38-3928, 1967. ,
DOI : 10.1063/1.1709043
Numerical and experimental analysis on green laser crystallization of amorphous silicon thin films, Optics & Laser Technology, vol.41, issue.4, pp.380-383, 2009. ,
DOI : 10.1016/j.optlastec.2008.09.003
Possible configurational model for hydrogen in amorphous Si:H. An exodiffusion study, Possible configuration model for hydrogen in amorphous Si:H. An exodiffusion study, pp.6648-6667, 1981. ,
DOI : 10.1103/PhysRevB.23.6648
Modeling of CW laser diode irradiation of amorphous silicon films, Applied Surface Science, vol.257, issue.12, pp.5127-5131, 2011. ,
DOI : 10.1016/j.apsusc.2010.11.025
URL : https://hal.archives-ouvertes.fr/hal-00597133
« CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD, Applied Surface Science ,
« PolySi films by CW laser annealing of thin aSi layers: Numerical and Experimental results, 26th European Photovoltaic Solar Energy Conference and Exhibition, 2011. ,
« CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD, EMRS Spring Meeting, Symp. J, 2011. ,
« Modeling of the CW laser irradiation of amorphous silicon films », EMRS Spring Meeting, 2010. ,