Skip to Main content Skip to Navigation
New interface
Theses

Etude de la stabilité et de la précision des modèles utilisés dans la correction des effets de proximité optique en photolithographie

Abstract : At present, common resist models utilized in photolithography to correct for optical proximity effects(OPC) became complex and less physical in order to capture the maximum of optical and chemical effectsin shorter times. The question on the stability of such models, purely empirical, become topical. In thisthesis, we study the stability of existing OPC models by examining the origins of model instability towardsprocess parameters. Thus, we have developed a perturbative method in order to evaluate the stabilitycriterion. However, achieving stable and simple models needs a separation between optical and otherchemical effects. Besides, multiple approximations, widely utilized in the modeling of optical systemsoperating at high numerical aperture, lead to residual errors which can degrade OPC model accuracyand stability. Thus, we were interested to study the limits of validity of the Kirchhoff approximation,a method which, so far, is the most commonly used in mask near-field modeling. Other semi-rigorousmethods for mask topography effect modeling were also evaluated. These approximate methods canimprove the accuracy but degrades the run time. We then suggested different techniques to correct formask topography effects, while keeping the Kirchhoff approximation in the modeling of the optical part.Among them, we showed that errors due to mask topography effects can be partially captured by asecond empirical model. However, in order to ensure a good accuracy, it is necessary to increase themodel complexity by using more additional empirical terms. Finally, in order to achieve a numericalstability of the empirical model, we introduced a new hybrid fast and accurate method, the multi-levelmethod, which allows us to correct for mask topography effects through a multi-level decomposition ofthe thin mask and discussed its advantages and drawbacks.
Document type :
Theses
Complete list of metadata

Cited literature [140 references]  Display  Hide  Download

https://theses.hal.science/tel-00682907
Contributor : ABES STAR :  Contact
Submitted on : Tuesday, March 27, 2012 - 11:47:40 AM
Last modification on : Friday, March 25, 2022 - 9:41:31 AM
Long-term archiving on: : Thursday, June 28, 2012 - 2:26:13 AM

File

Saied_mazen_2011_archivage1.pd...
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-00682907, version 1

Collections

UGA | CNRS | STAR

Citation

Mazen Saied. Etude de la stabilité et de la précision des modèles utilisés dans la correction des effets de proximité optique en photolithographie. Autre. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENT079⟩. ⟨tel-00682907⟩

Share

Metrics

Record views

222

Files downloads

626