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DOI : 10.1038/nnano.2009.177

V. Perebeinos and P. Avouris, Inelastic scattering and current saturation in graphene, Physical Review B, vol.81, issue.19, pp.1-8, 2010.
DOI : 10.1103/PhysRevB.81.195442

C. Dimitrakopoulos, Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.28, issue.5, p.985, 2010.
DOI : 10.1116/1.3480961

W. Zhu, V. Perebeinos, M. Freitag, and P. Avouris, Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene, Physical Review B, vol.80, issue.23, pp.1-8, 2009.
DOI : 10.1103/PhysRevB.80.235402

V. Perebeinos, P. Avouris, D. Jang, J. W. Lee, G. Ghibaudo et al., Current Saturation and Surface Polar Phonon Scattering in Graphene Arxiv preprint arXiv:0910 Publication Lists Journals 1, 2009.

D. Jang, J. W. Lee, T. Chiarella, T. Hoffmann, L. Montes et al., Lowfrequency noise dependence of fin width variation FinFETs

J. W. Lee, M. Mouis, D. Jang, K. Tachi, G. T. Kim et al., Short Channel Mobility Analysis of SiGe Nanowire pFETs: Origins of the Strain Induced Performance Improvement, Solid State Electronics

J. W. Lee, D. Jang, M. Mouis, G. T. Kim, T. Chiarella et al., Mobility analysis of surface roughness scattering in FinFET devices, Solid-State Electronics, vol.62, issue.1, pp.195-201, 2011.
DOI : 10.1016/j.sse.2011.04.020

. Hong, Nanoneedle Transistor-Based Sensors for the Selective Detection of Intracellular Calcium Ions, ACS Nano, vol.5, pp.3888-3895, 2011.

D. Jang, J. W. Lee, C. W. Lee, J. P. Colinge, L. Montès et al., Low-frequency noise in junctionless multigate transistors, Applied Physics Letters, vol.98, issue.13, p.133502, 2011.
DOI : 10.1063/1.3569724

D. Jang, J. W. Lee, K. Tachi, L. Montès, T. Ernst et al., Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors, Applied Physics Letters, vol.97, issue.7, p.73505, 2010.
DOI : 10.1063/1.3480424

K. Kim, D. Jang, K. Lee, H. Kang, B. Y. Yu et al., Influence of electrical contacts on the 1/f noise in individual multi-walled carbon nanotubes, Nanotechnology, vol.21, issue.335702, 2010.

J. W. Lee, D. Jang, G. T. Kim, M. Mouis, and G. Ghibaudo, Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors, Journal of Applied Physics, vol.107, issue.4, p.44501, 2010.
DOI : 10.1063/1.3294961

URL : https://hal.archives-ouvertes.fr/hal-00596315

. Ernst, Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires, IEEE International Electron Device Meeting, p.313, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00603809

E. S. Park, D. Jang, J. Lee, Y. J. Kim, J. Na et al., Maskless optical microscope lithography system, Review of Scientific Instruments, vol.80, issue.12, p.126101, 2009.
DOI : 10.1063/1.3266965

D. Jang, S. Seo, J. Huh, G. T. Kim, G. Ghibaudo et al., 1/f noise analysis in monolayer graphene field-effect transistors with electrical noise models, 2012.

J. Huh, M. K. Ju, D. Jang, J. H. Lee, and G. T. Kim, Influence of carrier transport in individual SnO 2 nanowire FETs by surface passivation, MRS fall meeting, 2011.

D. Jang, J. W. Lee, K. Tachi, T. Ernst, L. Montes et al., Inhomogeneous trap distribution in compressively strained SiGe core-shell nanowire transistors, Nano Korea, 2011.

D. Jang, G. T. Kim, G. Ghibaudo, and J. Lee, Temperature dependence analysis of 1/f noise based on the random walk model in back-gate InAs nanowire devices, International Forum on Functional Materials (IFFM), 2011.

D. Jang, T. E. Park, E. Park, J. Chang, H. J. Choi et al., Analysis of the metal contact with the noise measurement in Cu-doped GaN nanowires, The 15th International Symposium on the Physics of Semiconductors and Applications (ISPSA), 2011.

D. Jang, J. W. Lee, L. Montès, G. Ghibaudo, J. P. Colinge et al., Experimental noise analysis between a FinFET and a junctionless transistor, Tao-Yuan, 2011.

J. W. Lee, D. Jang, M. Mouis, G. T. Kim, T. Chiarella et al., Experimental analysis of surface roughness scattering in FinFET devices, 2010 Proceedings of the European Solid State Device Research Conference, 2010.
DOI : 10.1109/ESSDERC.2010.5618353

M. K. Joo, U. J. Kim, D. Jang, Y. Kim, and G. T. Kim, 1/f Noise Behaviors with the Hysteresis of Ambipolar CNT Field Effect Transistors, MRS Fall meeting, 2009.

D. Jang, J. W. Lee, H. J. Jin, G. T. Kim, and B. K. Ju, The Driving Technology of the Flat Panel Display, Electronic Parts & Components, 2008.

S. H. Choi, D. W. Kim, D. Y. Jang, H. J. Ji, S. W. Kim et al., Noise properties of a single ZnO nanowire device, MRS spring meeting & MRS proceedings, 2008.

J. W. Lee, E. Park, S. Park, D. Y. Jang, K. Kim et al., SPICE Modeling of Organic Field Effect Transistors (OFET), 2006.

. G. Patents-1, E. Kim, D. Park, J. W. Jang, and . Lee, Photolithography System using an Optical Microscope, China ? Appl. No, vol.3264, issue.12, p.33

E. Kim, S. E. Moon, H. Lee, J. Park, J. D. Kim et al., Photolithography System using polarizer and FFT for detecting nanowire, U.S.A. ? Appl. Japan ? Appl, vol.940379, issue.11, 2007.

D. Jang, J. W. Lee, G. T. Kim, L. Montes, and G. Ghibaudo, Electrical noise characterization in nano structure devices, Workshop on III-V FET technology, 2011.

D. Jang, L. Montes, G. Ghibaudo, J. Lee, and G. T. Kim, Electrical noise in quasi 1-D conductors, Korea University WCU workshop, p.2, 2011.

D. Jang, K. Kim, J. Lee, L. Montes, G. Ghibaudo et al., Understanding of lowfrequency noise in semiconducting nanowires, 2010.

J. Lee, D. Jang, G. T. Kim, and G. Ghibaudo, What can we learn from low-frequency noise measurements in semiconductor nanostructures, th Korean-German Nano-Photonics Workshop, 2010.