M. Kurdi, H. Bertin, E. Martincic, M. De-kersauson, G. Fishman et al., Control of direct band gap emission of bulk germanium by mechanical tensile strain, Applied Physics Letters, vol.96, issue.4, p.41909, 2010.
DOI : 10.1063/1.3297883

M. De-kersauson, R. Jakomin, M. Kurdi, G. Beaudoin, N. Zerounian et al., Direct and indirect band gap room temperature electroluminescence of Ge diodes, Journal of Applied Physics, vol.108, issue.2, p.23105, 2010.
DOI : 10.1063/1.3462400

R. Jakomin, M. De-kersauson, M. Kurdi, L. Largeau, O. Mauguin et al., High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition, Chaigneau, I. Sagnes, and P. Boucaud, APPLIED PHYSICS LETTERS 98, p.15109, 2011.
DOI : 10.1063/1.3559231

M. Kurdi, S. David, X. Checoury, G. Fishman, S. Sauvage et al., Optical gain in single tensile-strained germanium photonic wire, Boucaud OPTICS EXPRESS, vol.19, issue.1, pp.17925-17934, 2011.

A. Ghrib, M. De-kersauson, M. Kurdi, R. Jakomin, G. Beaudoin et al., Control of tensile strain in germanium waveguides through silicon nitride layers, Applied Physics Letters, vol.100, issue.20, p.201104, 2012.
DOI : 10.1063/1.4718525

P. Boucaud, M. Kurdi, S. Sauvage, M. De-kersauson, A. Ghrib et al., Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach, NATURE PHOTONICS JOURNAL OF APPLIED PHYSICS, vol.7, issue.113, p.53513, 2013.

M. Kurdi, G. Fishman, S. Sauvage, and P. Boucaud, Band structure and optical gain of tensile-strained germanium based on a 30 band k???p formalism, Journal of Applied Physics, vol.107, issue.1, pp.13710-13711, 2010.
DOI : 10.1063/1.3279307

M. Kurdi, T. Kociniewski, T. Ngo, J. Boulmer, D. Debarre et al., Enhanced photoluminescence of heavily n-doped germanium, Applied Physics Letters, vol.94, issue.19, p.1, 2009.
DOI : 10.1063/1.3138155

G. Chang and H. H. Cheng, Optical gain of germanium infrared lasers on different crystal orientations, Journal of Physics D: Applied Physics, vol.46, issue.6, p.65103, 2013.
DOI : 10.1088/0022-3727/46/6/065103

A. Ghrib, M. De-kersauson, M. Kurdi, R. Jakomin, G. Beaudoin et al., Control of tensile strain in germanium waveguides through silicon nitride layers, Applied Physics Letters, vol.100, issue.20, pp.201104-201105, 2012.
DOI : 10.1063/1.4718525

S. Cheng, Germanium as an optical emitter for monolithic integration on silicon, 2011.

W. Klingenstein and S. Heinz, Direct gap recombination in germanium at high excitation level and low temperature, Solid-State Electronics, vol.21, issue.11-12, pp.11-12, 1978.
DOI : 10.1016/0038-1101(78)90210-1

G. Bir and G. Pikus, Symmetry and strain-induced effects in semiconductors, 1974.

S. Richard, F. Aniel, and G. Fishman, method, Physical Review B, vol.70, issue.23, p.235204, 2004.
DOI : 10.1103/PhysRevB.70.235204

URL : https://hal.archives-ouvertes.fr/in2p3-00147976

G. Fishman, Semi-conducteurs : les bases de la théorie k.p. École polytechnique, 2010.

J. Menéndez and J. Kouvetakis, Type-I Ge???Ge1???x???ySixSny strained-layer heterostructures with a direct Ge bandgap, Applied Physics Letters, vol.85, issue.7, pp.1175-1176, 1175.
DOI : 10.1063/1.1784032

J. Liu, X. Sun, L. C. Kimerling, and J. Michel, Direct-gap optical gain of Ge on Si at room temperature, Optics Letters, vol.34, issue.11, p.1738, 2009.
DOI : 10.1364/OL.34.001738

M. Kurdi, H. Bertin, E. Martincic, M. De-kersauson, G. Fishman et al., Control of direct band gap emission of bulk germanium by mechanical tensile strain, Applied Physics Letters, vol.96, issue.4, pp.41909-41910, 2010.
DOI : 10.1063/1.3297883

M. K. Small and W. Nix, Analysis of the accuracy of the bulge test in determining the mechanical properties of thin films, Journal of Materials Research, vol.41, issue.06, pp.1553-1563, 2011.
DOI : 10.1016/0040-6090(81)90407-7

R. Yahiaoui, K. Danaie, S. Petitgrand, and A. Bosseboeuf, Automated interferometric system for bulge test measurements of micromachined membranes, pp.160-169, 2001.

S. Timoshenko and S. Woinowsky-krieger, Theory of plates and shells, 1959.

J. R. Sánchez-pérez, C. Boztug, F. Chen, F. F. Sudradjat, D. M. Paskiewicz et al., Direct-bandgap light-emitting germanium in tensilely strained nanomembranes, Proceedings of the National Academy of Sciences of the United States of America, pp.18-893, 2011.
DOI : 10.1073/pnas.1107968108

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, Direct gap photoluminescence of n-type tensile-strained Ge-on-Si, Applied Physics Letters, vol.95, issue.1, pp.11911-11912, 2009.
DOI : 10.1063/1.3170870

J. T. Bessette, R. Camacho-aguilera, Y. Cai, L. C. Kimerling, and J. Michel, Optical characterization of Ge-on-Si laser gain media, 8th IEEE International Conference on Group IV Photonics, pp.130-132, 2011.
DOI : 10.1109/GROUP4.2011.6053739

D. Cammilleri, F. Fossard, D. Débarre, C. T. Manh, C. Dubois et al., Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon, Thin Solid Films, vol.517, issue.1, pp.75-79, 2008.
DOI : 10.1016/j.tsf.2008.08.073

URL : https://hal.archives-ouvertes.fr/hal-00761044

S. Jain and D. Roulston, A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1???x strained layers, Solid-State Electronics, vol.34, issue.5, pp.453-465, 1991.
DOI : 10.1016/0038-1101(91)90149-S

C. Haas, Infrared Absorption in Heavily Doped n-Type Germanium, Physical Review, vol.125125, issue.6, pp.1965-1971, 1962.

R. Conradt and J. Aengenheister, Minority carrier lifetime in highly doped Ge, Solid State Communications, vol.10, issue.3, pp.321-323, 1972.
DOI : 10.1016/0038-1098(72)90016-6

L. Carroll, P. Friedli, S. Neuenschwander, H. Sigg, S. Cecchi et al., Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain, Physical Review Letters, vol.109, issue.5, p.57402, 2012.
DOI : 10.1103/PhysRevLett.109.057402

T. M. Buck and W. H. Brattain, Investigations of Surface Recombination Velocities on Germanium by the Photoelectromagnetic Method, Journal of The Electrochemical Society, vol.102, issue.11, p.636, 1955.
DOI : 10.1149/1.2429927

S. Sun, Y. Sun, Z. Liu, D. Lee, S. Peterson et al., Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions

B. P. Swain, H. Takato, Z. Liu, and I. Sakata, Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells, Solar Energy Materials and Solar Cells, vol.95, issue.1, pp.84-88, 2011.
DOI : 10.1016/j.solmat.2010.05.012

B. Onsia, T. Conard, S. De-gendt, M. M. Heyns, I. Hoflijk et al., A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface, Solid State Phenomena, vol.103, issue.104, pp.27-30, 2005.
DOI : 10.4028/www.scientific.net/SSP.103-104.27

N. Posthuma, G. Flamand, W. Geens, and J. Poortmans, Surface passivation for germanium photovoltaic cells, Solar Energy Materials and Solar Cells, vol.88, issue.1, pp.37-45, 2005.
DOI : 10.1016/j.solmat.2004.10.005

V. Andreev, V. Khvostikov, O. Khvostikova, N. Kaluzhniy, E. Oliva et al., Low-bandgap pv and thermophotovoltaic cells, Proceedings of WCPEC-3, 2003.

F. Zhang, V. Crespi, and P. Zhang, Produces a Direct Band Gap in Germanium, Physical Review Letters, vol.102, issue.15, p.156401, 2009.
DOI : 10.1103/PhysRevLett.102.156401

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling et al., Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si, Optics Express, vol.15, issue.18, p.11272, 2007.
DOI : 10.1364/OE.15.011272

W. G. Spitzer, F. Trumbore, and R. Logan, ???Type Germanium, Journal of Applied Physics, vol.32, issue.10, pp.1822-1823, 1822.
DOI : 10.1063/1.1728243

R. Newman and W. Tyler, -Type Germanium, Physical Review, vol.105, issue.3, pp.885-886, 1957.
DOI : 10.1103/PhysRev.105.885

URL : https://hal.archives-ouvertes.fr/in2p3-00459276

B. Dutt, D. S. Sukhdeo, D. Nam, B. M. Vulovic, and K. C. Saraswat, Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping, IEEE Photonics Journal, vol.4, issue.5, pp.2002-2009, 2012.
DOI : 10.1109/JPHOT.2012.2221692

G. Chang, S. Chang, and S. L. Chuang, Theory for n-type doped, tensile-strained Ge???Si_xGe_ySn_1???x???y quantum-well lasers at telecom wavelength, Optics Express, vol.17, issue.14, p.11246, 2009.
DOI : 10.1364/OE.17.011246

Y. Bai, K. E. Lee, C. Cheng, M. L. Lee, and E. Fitzgerald, Growth of highly tensile-strained Ge on relaxed InxGa1???xAs by metal-organic chemical vapor deposition, Journal of Applied Physics, vol.104, issue.8, pp.84518-84519, 2008.
DOI : 10.1063/1.3005886

J. Liu, X. Sun, R. Camacho-aguilera, L. C. Kimerling, and J. Michel, Ge-on-Si laser operating at room temperature, Optics Letters, vol.35, issue.5, pp.679-81, 2010.
DOI : 10.1364/OL.35.000679

R. E. Camacho-aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli et al., An electrically pumped germanium laser, Optics Express, vol.20, issue.10, p.11316, 2012.
DOI : 10.1364/OE.20.011316

Y. Huo, H. Lin, R. Chen, M. Makarova, Y. Rong et al., Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy, Applied Physics Letters, vol.98, issue.1, pp.11111-11112, 2011.
DOI : 10.1063/1.3534785

G. Attolini, M. Bosi, N. Musayeva, C. Pelosi, C. Ferrari et al., Homo and hetero epitaxy of Germanium using isobutylgermane, Thin Solid Films, vol.517, issue.1, pp.404-406, 2008.
DOI : 10.1016/j.tsf.2008.08.137

E. Goyette and . Woelk, Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE, Journal of Crystal Growth, vol.298, pp.172-175, 2007.

H. Akazawa, Hydrogen induced roughening and smoothing in surface morphology during synchrotron-radiation-excited GeH4-source homoepitaxy on Ge(001), Journal of Applied Physics, vol.99, issue.10, pp.103505-103506, 2006.
DOI : 10.1063/1.2194232

R. Jakomin, M. De-kersauson, M. Kurdi, L. Largeau, O. Mauguin et al., High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition, Applied Physics Letters, vol.98, issue.9
DOI : 10.1063/1.3559231

M. Bosi, G. Attolini, C. Ferrari, C. Frigeri, J. R. Herrera et al., MOVPE growth of homoepitaxial germanium, Journal of Crystal Growth, vol.310, issue.14, pp.3282-3286, 2008.
DOI : 10.1016/j.jcrysgro.2008.04.009

G. Attolini, C. Ferrari, and E. Gombia, A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications, 24th European Photovoltaic Solar Energy Conference 24th European Photovoltaic Solar Energy Conference, pp.21-25, 2009.

T. S. Perova, J. Wasyluk, K. Lyutovich, E. Kasper, M. Oehme et al., Composition and strain in thin Si1???xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction, Journal of Applied Physics, vol.109, issue.3, p.33502, 2011.
DOI : 10.1063/1.3536508

F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti et al., Phonon strain shift coefficients in Si1???xGex alloys, Journal of Applied Physics, vol.103, issue.9, p.93521, 2008.
DOI : 10.1063/1.2913052

J. S. Reparaz, A. Bernardi, .. R. Goni, M. I. Alonso, and M. Garriga, Composition dependence of the phonon strain shift coefficients of SiGe alloys revisited, Applied Physics Letters, vol.92, issue.8, p.81909, 2008.
DOI : 10.1063/1.2884526

J. Haynes, New Radiation Resulting from Recombination of Holes and Electrons in Germanium, Physical Review, vol.98, issue.6, pp.1866-1868, 1955.
DOI : 10.1103/PhysRev.98.1866

S. Jan, C. Chen, C. Lee, S. Chan, K. Peng et al., Influence of defects and interface on radiative transition of Ge, Applied Physics Letters, vol.98, issue.14, pp.141105-141106, 2011.
DOI : 10.1063/1.3571439

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. Beeler et al., Direct versus indirect optical recombination in Ge films grown on Si substrates, Physical Review B, vol.84, issue.20, pp.1-6, 2011.
DOI : 10.1103/PhysRevB.84.205307

J. Ponpon, Evolution with time of the surface properties of high-purity germanium Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment, pp.262-265, 2001.

W. L. Ng, M. A. Lourenço, R. M. Gwilliam, S. Ledain, G. Shao et al., An efficient room-temperature silicon-based light-emitting diode, Nature, vol.69, issue.6825, pp.192-196, 2001.
DOI : 10.1038/35065571

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov et al., Anisotropic strain and phonon deformation potentials in GaN, Physical Review B, vol.75, issue.19, pp.1-11, 2007.
DOI : 10.1103/PhysRevB.75.195217

URL : http://digitalcommons.unl.edu/cgi/viewcontent.cgi?article=1036&context=cmrafacpub

U. Schwarz, P. Schuck, M. Mason, R. Grober, A. Roskowski et al., Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC, Physical Review B, vol.67, issue.4, pp.1-4, 2003.
DOI : 10.1103/PhysRevB.67.045321

S. Ruvimov, T. Suski, J. W. Iii, E. Jones, M. Rubin et al., Strain-related phenomena in GaN thin films, pp.745-753, 1996.

M. Cazzanelli, F. Bianco, E. Borga, G. Pucker, M. Ghulinyan et al., Second-harmonic generation in silicon waveguides strained by silicon nitride, Nature Materials, vol.11, issue.2, pp.148-54, 2012.
DOI : 10.1103/PhysRevB.37.10159

URL : https://hal.archives-ouvertes.fr/hal-00739055

T. Nagashima, K. Okumura, K. Murata, and M. Yamaguchi, A germanium back-contact type cell for thermophotovoltaic applications, Photovoltaic Energy Conversion Proceedings of 3rd World Conference on, pp.200-203, 2003.

A. Dollet, J. P. Couderc, and B. Despax, Analysis and numerical modelling of silicon nitride deposition in a plasma-enhanced chemical vapour deposition reactor. I. Bidimensional modelling, Plasma Sources Science and Technology, vol.4, issue.1, pp.94-106, 1995.
DOI : 10.1088/0963-0252/4/1/010

G. Raymond, Etude mécanique des films de nitrure de silicium fortement contraints utilisés pour augmenter les performances des transistors CMOS, 2009.

B. A. Walmsley, Y. Liu, X. Z. Hu, M. B. Bush, J. M. Dell et al., Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Films, Journal of Microelectromechanical Systems, vol.16, issue.3, pp.622-627, 1992.
DOI : 10.1109/JMEMS.2007.893518

V. Yam, V. L. Thanh, Y. Zheng, P. Boucaud, and D. Bouchier, Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots, Physical Review B, vol.63, issue.3, p.33313, 2001.
DOI : 10.1103/PhysRevB.63.033313

J. O-'gorman, S. L. Chuang, and A. F. Levi, Carrier pinning by mode fluctuations in laser diodes, Applied Physics Letters, vol.62, issue.13, pp.1454-1455, 1454.

M. De-kersauson, R. Jakomin, M. Kurdi, G. Beaudoin, N. Zerounian et al., Direct and indirect band gap room temperature electroluminescence of Ge diodes, Journal of Applied Physics, vol.108, issue.2, pp.23105-23106, 2010.
DOI : 10.1063/1.3462400

K. L. Shaklee, DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS, Applied Physics Letters, vol.18, issue.11, p.4751, 1971.
DOI : 10.1063/1.1653501

M. Mcgehee, R. Gupta, S. Veenstra, E. Miller, M. Díaz-garcía et al., Amplified spontaneous emission from photopumped films of a conjugated polymer, Physical Review B, vol.58, issue.11, pp.7035-7039, 1998.
DOI : 10.1103/PhysRevB.58.7035

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes, Optics Letters, vol.34, issue.8, pp.1198-200, 2009.
DOI : 10.1364/OL.34.001198

S. Cheng, J. Lu, G. Shambat, H. Yu, K. Saraswat et al., Room temperature 16 ??m electroluminescence from Ge light emitting diode on Si substrate, Optics Express, vol.17, issue.12, p.10019, 2009.
DOI : 10.1364/OE.17.010019

M. Kurdi, S. Sauvage, G. Fishman, and P. Boucaud, self-assembled islands, Physical Review B, vol.73, issue.19, p.195327, 2006.
DOI : 10.1103/PhysRevB.73.195327

S. Chang and S. Chuang, Theory of Optical Gain of <formula formulatype="inline"> <tex>${\hbox {Ge--}}{\hbox {Si}}_{x}{\hbox {Ge}}_{y}{\hbox {Sn}}_{1-x-y}$</tex> </formula> Quantum-Well Lasers, IEEE Journal of Quantum Electronics, vol.43, issue.3, pp.249-256, 2007.
DOI : 10.1109/JQE.2006.890401

L. Allen and G. I. Peters, Amplified Spontaneous Emission and External Signal Amplification in an Inverted Medium, Physical Review A, vol.8, issue.4, pp.2031-2047, 1973.
DOI : 10.1103/PhysRevA.8.2031

J. C. Johnson, H. Choi, K. P. Knutsen, R. D. Schaller, P. Yang et al., Single gallium nitride nanowire lasers, Nature Materials, vol.1, issue.2, pp.106-116, 2002.
DOI : 10.1038/nmat728

X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, Single-nanowire electrically driven lasers, Nature, vol.421, issue.6920, pp.241-246, 2003.
DOI : 10.1038/nature01353

M. A. Zimmler, F. Capasso, S. Müller, and C. Ronning, Optically pumped nanowire lasers: invited review, Semiconductor Science and Technology, vol.25, issue.2, p.24001, 2010.
DOI : 10.1088/0268-1242/25/2/024001