.. Caractérisation-de-l-'´-echantillon-mésoscopique, 34 2.2.1 Régimè a faible tension de substrat, 34 2.2.2 Régimè a forte tension de substrat, p.37

.. Modélisation-de-la-dynamique-du-système, 60 3.2.1 Pompage d'´ electrons, p.61

B. Dupont-ferrier, B. Roche, X. Voisin, R. Jehl, M. Wacquez et al., Coherent Coupling of Two Dopants in a Silicon Nanowire Probed by Landau-Zener-St??ckelberg Interferometry, Physical Review Letters, vol.110, issue.13, p.136802, 2013.
DOI : 10.1103/PhysRevLett.110.136802

B. Roche, E. Dupont-ferrier, B. Voisin, M. Cobian, X. Jehl et al., Detection of a Large Valley-Orbit Splitting in Silicon with Two-Donor Spectroscopy, Physical Review Letters, vol.108, issue.20, p.206812, 2012.
DOI : 10.1103/PhysRevLett.108.206812

E. Prati, M. De-michielis, M. Belli, S. Cocco, M. Fanciulli et al., Few electron limit of n-type metal oxide semiconductor single electron transistors, Nanotechnology, vol.23, issue.21, p.215204, 2012.
DOI : 10.1088/0957-4484/23/21/215204

@. , T. B. Roche, B. Voisin, X. Jehl, R. Wacquez et al., dual mode field-effect or single electron transistor

. Appl, . Phys, V. N. Lett, X. Golovach, M. Jehl et al., ? Single-dopant resonance in a single-electron transistor, Phys. Rev. B, vol.100, issue.83, pp.32107-075401, 2011.

A. B. Mesures-automatiques-`-aautomatiques-`-automatiques-`-a, @. S. Températuretemp´température-ambiante, R. Pauliac-vaujour, C. Wacquez, T. Vizioz et al., Patterning Strategy for Monoelectronic Device Platform in a Complementary Metal Oxide Semiconductor Technology

M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer et al., ? Compact silicon double and triple dots realized with only two gates

. Appl, . Phys, and . Lett, Références [1] C. W. J. Beenakker : Theory of Coulomb-blockade oscillations in the conductance of a quantum dot, Phys. Rev. B, vol.95, issue.444, pp.242107-31646, 2009.

E. Bonet, M. Mandar, D. C. Deshmukh, and . Ralph, Solving rate equations for electron tunneling via discrete quantum states, Physical Review B, vol.65, issue.4, p.45317, 2002.
DOI : 10.1103/PhysRevB.65.045317

URL : http://arxiv.org/abs/cond-mat/0108248

M. A. Kastner, The single-electron transistor, Reviews of Modern Physics, vol.64, issue.3, pp.849-858, 1992.
DOI : 10.1103/RevModPhys.64.849

S. Tarucha, D. G. Austing, T. Honda, R. J. Van-der-hage, and L. P. , Shell Filling and Spin Effects in a Few Electron Quantum Dot, Physical Review Letters, vol.77, issue.17, pp.3613-3616, 1996.
DOI : 10.1103/PhysRevLett.77.3613

G. Katsaros, P. Spathis, M. Stoffel, F. Fournel, M. Mongillo et al., Hybrid superconductor???semiconductor devices made from self-assembled SiGe nanocrystals on silicon, Nature Nanotechnology, vol.103, issue.6, pp.458-464, 2010.
DOI : 10.1038/nnano.2010.84

URL : https://hal.archives-ouvertes.fr/hal-00700017

C. Yang, Z. Zhong, and C. M. Lieber, Encoding Electronic Properties by Synthesis of Axial Modulation-Doped Silicon Nanowires, Science, vol.310, issue.5752, pp.3101304-1307, 2005.
DOI : 10.1126/science.1118798

L. J. Lauhon, M. S. Gudiksen, D. Wang, and M. Charles, Epitaxial core???shell and core???multishell nanowire heterostructures, Nature, vol.285, issue.6911, pp.57-61, 2002.
DOI : 10.1063/1.102280

W. Lu, J. Xiang, B. P. Timko, Y. Wu, and M. Charles, One-dimensional hole gas in germanium/silicon nanowire heterostructures, Proceedings of the National Academy of Sciences, vol.102, issue.29, pp.10046-10051, 2005.
DOI : 10.1073/pnas.0504581102

Y. Hu, H. O. Churchill, D. J. Reilly, J. Xiang, C. M. Lieber et al., A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor, Nature Nanotechnology, vol.12, issue.10, pp.622-625, 2007.
DOI : 10.1103/PhysRevLett.95.076805

W. M. Weber, L. Geelhaar, A. P. Graham, E. Unger, G. S. Duesberg et al., Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts, Nano Letters, vol.6, issue.12, pp.2660-2666, 2006.
DOI : 10.1021/nl0613858

M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer et al., Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices, ACS Nano, vol.5, issue.9, pp.7117-7123124314, 2009.
DOI : 10.1021/nn202524j

F. A. Zwanenburg, E. W. Cathalijn, Y. Van-rijmenam, C. M. Fang, . Lieber et al., Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot, Nano Letters, vol.9, issue.3, pp.1071-1079, 2009.
DOI : 10.1021/nl803440s

Z. Zhong, Y. Fang, W. Lu, and M. Charles, Coherent Single Charge Transport in Molecular-Scale Silicon Nanowires, Nano Letters, vol.5, issue.6, pp.1143-1146, 2005.
DOI : 10.1021/nl050783s

H. Matsuoka and . Shin-'ichiro-kimura, Transport properties of a silicon single???electron transistor at 4.2 K, Applied Physics Letters, vol.66, issue.5, pp.613-615, 1995.
DOI : 10.1063/1.114030

M. A. Lilly, M. S. Eriksson, and . Carroll, Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry, Phys. Rev. B, vol.80, issue.11, pp.115331-2009

M. Xiao, M. G. House, and H. W. , Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots, Applied Physics Letters, vol.97, issue.3, pp.32103-32106, 2010.
DOI : 10.1063/1.3464324

S. J. Angus, A. J. Ferguson, A. S. Dzurak, and R. G. Clark, Gate-Defined Quantum Dots in Intrinsic Silicon, Nano Letters, vol.7, issue.7, pp.2051-2055, 2007.
DOI : 10.1021/nl070949k

A. Morello, J. J. Pla, F. A. Zwanenburg, K. W. Chan, Y. Kuan et al., Dzurak : Singleshot readout of an electron spin in silicon, Nature, issue.7316, pp.467687-691, 2010.

S. Kravchenko and M. Sarachik, Metal???insulator transition in two-dimensional electron systems, Reports on Progress in Physics, vol.67, issue.1, p.1, 2004.
DOI : 10.1088/0034-4885/67/1/R01

T. M. Lu, D. C. Tsui, C. H. Lee, and C. W. Liu, Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6x10 6 cm 2 /Vs, Applied Physics Letters, issue.18, p.94182102, 2009.

C. B. Simmons, T. Seng-koh, N. Shaji, M. Thalakulam, L. J. Klein et al., Eriksson : Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot, Phys. Rev. B, issue.24, pp.82245312-2010

M. G. Borselli, K. Eng, E. T. Croke, B. M. Maune, B. Huang et al., Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots, Applied Physics Letters, vol.99, issue.6, pp.99063109-99063112, 2011.
DOI : 10.1063/1.3623479

B. M. Maune, M. G. Borselli, B. Huang, T. D. Ladd, P. W. Deelman et al., Coherent singlettriplet oscillations in a silicon-based double quantum dot, Nature, issue.7381, pp.481344-347, 2012.

M. Hofheinz, Coulomb blockade in silicon nanowire MOSFETs, Thèse de doctorat, 2006.
URL : https://hal.archives-ouvertes.fr/tel-00131052

H. Liu, T. Fujisawa, H. Inokawa, and Y. Ono, A gate-defined silicon quantum dot molecule, Applied Physics Letters, vol.92, issue.22, pp.222104-222107, 2008.
DOI : 10.1063/1.2938693

M. Fuechsle, . Mahapatras, . A. Zwanenburgf, E. A. Mark-friesen, and Y. Et-michelle, Simmons : Spectroscopy of few-electron single-crystal silicon quantum dots, Nat Nano, 2010.

M. Fuechsle, J. A. Miwa, S. Mahapatra, H. Ryu, S. Lee et al., A single-atom transistor, Nature Nanotechnology, vol.335, issue.4, pp.242-246, 2012.
DOI : 10.1038/nnano.2012.21

A. A. Prager, H. C. George, A. O. Orlov, and G. L. Snider, Experimental demonstration of hybrid CMOS-single electron transistor circuits, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.29, issue.4, p.41004, 2011.
DOI : 10.1116/1.3597833

S. J. Shin, C. S. Jung, B. J. Park, T. K. Yoon, J. J. Lee et al., Hasko : Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature, Appl. Phys. Lett, issue.10, p.97103101, 2010.

J. Chelikowsky, Silicon in All its Forms, MRS Bulletin, vol.1, issue.12, pp.951-960, 2002.
DOI : 10.1103/PhysRev.140.A1133

W. Lim, C. Yang, F. Zwanenburg, and . Dzurak, Spin filling of valley???orbit states in a silicon quantum dot, Nanotechnology, vol.22, issue.33, p.22335704, 2011.
DOI : 10.1088/0957-4484/22/33/335704

T. Ando, A. B. Fowler, and F. Stern, Electronic properties of two-dimensional systems, Reviews of Modern Physics, vol.54, issue.2, pp.437-672, 1982.
DOI : 10.1103/RevModPhys.54.437

H. Köhler and M. Roos, Quantitative determination of the valley splitting in n-type inverted silicon (100) MOSFET surfaces, Physica Status Solidi (b), vol.27, issue.1, pp.233-241, 1979.
DOI : 10.1002/pssb.2220910124

T. Ouisse, D. Maude, Y. Horiguchi, Y. Ono, K. Takahashi et al., Subband structure and anomalous valley splitting in ultra-thin siliconon-insulator MOSFET's, Physica B: Condensed Matter, issue.0, pp.249-251731, 1998.

K. Takashina, A. Fujiwara, S. Horiguchi, Y. Takahashi, and Y. Hirayama, Valley splitting control in SiO 2 /Si/SiO 2 quantum wells in the quantum Hall regime, Phys. Rev. B, issue.16, p.69161304, 2004.

K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama, Valley Polarization in Si(100) at Zero Magnetic Field, Physical Review Letters, vol.96, issue.23, pp.236801-2006
DOI : 10.1103/PhysRevLett.96.236801

S. Goswami, K. A. Slinker, M. Friesen, L. M. Mcguire, J. L. Truitt et al., Controllable valley splitting in silicon quantum devices, Nature Physics, vol.43, issue.1, pp.41-45
DOI : 10.1103/PhysRevLett.88.226805

D. Culcer, A. L. Saraiva, B. Koiller, X. Hu, S. Das et al., Valley-Based Noise-Resistant Quantum Computation Using Si Quantum Dots, Physical Review Letters, vol.108, issue.12, pp.126804-2012
DOI : 10.1103/PhysRevLett.108.126804

URL : http://arxiv.org/abs/1107.0003

M. Pierre, R. Wacquez, X. Jehl, M. Sanquer, M. Vinet et al., Single-donor ionization energies in a nanoscale CMOS channel, Nature Nanotechnology, vol.97, issue.2, p.133, 2010.
DOI : 10.1038/nnano.2009.373

W. Kohn and J. M. Luttinger, Theory of Donor States in Silicon, Physical Review, vol.98, issue.4, pp.915-922, 1955.
DOI : 10.1103/PhysRev.98.915

R. A. Faulkner, Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and Germanium, Physical Review, vol.184, issue.3, pp.713-721
DOI : 10.1103/PhysRev.184.713

A. Miller and E. Abrahams, Impurity Conduction at Low Concentrations, Physical Review, vol.120, issue.3, pp.745-755, 1960.
DOI : 10.1103/PhysRev.120.745

A. Ramdas and S. Rodriguez, Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors, Reports on Progress in Physics, vol.44, issue.12, p.1297, 1981.
DOI : 10.1088/0034-4885/44/12/002

M. Diarra, Y. Niquet, C. Delerue, and G. Allan, Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement, Physical Review B, vol.75, issue.4, pp.45301-2007
DOI : 10.1103/PhysRevB.75.045301

URL : https://hal.archives-ouvertes.fr/hal-00283119

G. P. Lansbergen, R. Rahman, C. J. Wellard, I. Woo, J. Caro et al., Gate-induced quantum-confinement transition of a single dopant atom in a silicon??FinFET, Nature Physics, vol.414, issue.8, pp.656-661, 2008.
DOI : 10.1038/nphys994

R. G. Jamieson, A. S. Clark, and . Dzurak, Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor, Nano Lett, vol.10, issue.1, pp.11-15, 2009.

H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert et al., Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire, Physical Review Letters, vol.97, issue.20, pp.97206805-2006
DOI : 10.1103/PhysRevLett.97.206805

URL : https://hal.archives-ouvertes.fr/hal-00135311

J. Könemann, P. König, T. Schmidt, E. Mccann, V. I. Fal-'ko et al., Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures, Physical Review B, vol.64, issue.15, pp.155314-2001
DOI : 10.1103/PhysRevB.64.155314

V. N. Golovach, X. Jehl, M. Houzet, M. Pierre, B. Roche et al., Single-dopant resonance in a single-electron transistor, Physical Review B, vol.83, issue.7, pp.75401-2011
DOI : 10.1103/PhysRevB.83.075401

S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Rueß, T. Hallam et al., Atomically Precise Placement of Single Dopants in Si, Physical Review Letters, vol.91, issue.13, pp.91136104-2003
DOI : 10.1103/PhysRevLett.91.136104

D. N. Jamieson, C. Yang, T. Hopf, S. M. Hearne, C. I. Pakes et al., Controlled shallow single-ion implantation in silicon using an active substrate for sub-20???keV ions, Applied Physics Letters, vol.86, issue.20, pp.86202101-86202104, 2005.
DOI : 10.1063/1.1925320

T. Shinada, S. Okamoto, T. Kobayashi, and I. Ohdomari, Enhancing semiconductor device performance using ordered dopant arrays, Nature, vol.437, issue.7062, pp.1128-1131, 2005.
DOI : 10.1038/nature04086

M. Pierre, Transport mono-´ electronique et détection de dopants uniques dans des transistors silicium, Thèse de doctorat, 2010.

M. Boehm, M. Hofheinz, X. Jehl, M. Sanquer, M. Vinet et al., Size scaling of the addition spectra in silicon quantum dots, Physical Review B, vol.71, issue.3, p.71033305, 2005.
DOI : 10.1103/PhysRevB.71.033305

M. Pierre, M. Hofheinz, X. Jehl, M. Sanquer, G. Molas et al., Background charges and quantum effects in quantum dots transport spectroscopy, The European Physical Journal B, vol.70, issue.4, pp.475-481, 1140.
DOI : 10.1140/epjb/e2009-00258-4

S. Chandrasekhar, Stochastic Problems in Physics and Astronomy, Reviews of Modern Physics, vol.15, issue.1, pp.1-89, 1943.
DOI : 10.1103/RevModPhys.15.1

R. Rahman, J. Verduijn, N. Kharche, G. P. Lansbergen, G. Klimeck et al., Engineered valley-orbit splittings in quantum-confined nanostructures in silicon, Physical Review B, vol.83, issue.19, p.83195323, 2011.
DOI : 10.1103/PhysRevB.83.195323

M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet et al., Capacitance enhancement in Coulomb blockade tunnel barriers, Physical Review B, vol.75, issue.23, p.235301, 2007.
DOI : 10.1103/PhysRevB.75.235301

W. G. Van-der-wiel, S. De-franceschi, J. M. Elzerman, T. Fujisawa, S. Tarucha et al., Electron transport through double quantum dots, Reviews of Modern Physics, vol.75, issue.1, pp.1-2002
DOI : 10.1103/RevModPhys.75.1

R. Hanson, L. P. Kouwenhoven, J. R. Petta, S. Tarucha, and L. M. , Spins in few-electron quantum dots, Reviews of Modern Physics, vol.79, issue.4, pp.1217-1265, 2007.
DOI : 10.1103/RevModPhys.79.1217

S. J. Chorley, J. Frake, C. G. Smith, G. A. Jones, and M. R. Buitelaar, Quantized charge pumping through a carbon nanotube double quantum dot, Applied Physics Letters, vol.100, issue.14, pp.143104-143107, 2012.
DOI : 10.1063/1.3700967

M. G. House, H. Pan, M. Xiao, and H. W. , Non-equilibrium charge stability diagrams of a silicon double quantum dot, Applied Physics Letters, vol.99, issue.11, pp.112116-112119, 2011.
DOI : 10.1063/1.3640236

H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara et al., Pauli-spin-blockade transport through a silicon double quantum dot, Physical Review B, vol.77, issue.7, p.77073310, 2008.
DOI : 10.1103/PhysRevB.77.073310

Y. M. Niquet, D. Rideau, C. Tavernier, H. Jaouen, and X. Blase, Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys, Physical Review B, vol.79, issue.24, p.79245201, 2009.
DOI : 10.1103/PhysRevB.79.245201

URL : https://hal.archives-ouvertes.fr/hal-00992736

G. Ingold and Y. V. Nazarov, Charge Tunneling Rates in Ultrasmall Junctions, NATO ASI Series B, vol.294, pp.21-107, 1992.
DOI : 10.1007/978-1-4757-2166-9_2

S. D. Barrett and G. J. Milburn, Measuring the decoherence rate in a semiconductor charge qubit, Physical Review B, vol.68, issue.15, pp.155307-2003
DOI : 10.1103/PhysRevB.68.155307

P. Nozì-eres and C. T. De-dominicis, Singularities in the X-Ray Absorption and Emission of Metals. III. One-Body Theory Exact Solution, Physical Review, vol.178, issue.3, pp.1097-1107, 1969.
DOI : 10.1103/PhysRev.178.1097

K. A. Matveev and A. I. Larkin, Interaction-induced threshold singularities in tunneling via localized levels, Physical Review B, vol.46, issue.23, pp.15337-15347, 1992.
DOI : 10.1103/PhysRevB.46.15337

A. K. Geim, P. C. Main, J. L. Scala, N. , L. Eaves et al., Pate : Fermi-edge singularity in resonant tunneling, Phys. Rev. Lett, issue.13, pp.722061-2064, 1994.

V. Yuli, . Nazarov, and M. Yaroslav, Blanter : Quantum transport, 2009.

B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, 1984.
DOI : 10.1007/978-3-662-02403-4

X. Hu, B. Koiller, S. Das, and . Sarma, Charge qubits in semiconductor quantum computer architecture: Tunnel coupling and decoherence, Physical Review B, vol.71, issue.23, p.71235332, 2005.
DOI : 10.1103/PhysRevB.71.235332

C. J. Wellard, L. C. Hollenberg, S. Das, and . Sarma, quantum-computer architecture, Physical Review B, vol.74, issue.7, pp.74075306-2006
DOI : 10.1103/PhysRevB.74.075306

H. Pothier, P. Lafarge, C. Urbina, D. Esteve, and M. H. Devoret, Single-Electron Pump Based on Charging Effects, Europhysics Letters (EPL), vol.17, issue.3, p.249, 1992.
DOI : 10.1209/0295-5075/17/3/011

L. J. Geerligs, V. F. Anderegg, P. A. Holweg, J. E. Mooij, H. Pothier et al., Frequency-locked turnstile device for single electrons, Physical Review Letters, vol.64, issue.22, pp.2691-2694, 1990.
DOI : 10.1103/PhysRevLett.64.2691

URL : http://repository.tudelft.nl/islandora/object/uuid:f037dd4a-fa84-4ecb-b3c6-716333d5fd40/datastream/OBJ/download

L. P. Kouwenhoven, A. T. Johnson, N. C. Van-der-vaart, C. J. Harmans, and C. T. Foxon, Quantized current in a quantum-dot turnstile using oscillating tunnel barriers, Physical Review Letters, vol.67, issue.12, pp.1626-1629, 1991.
DOI : 10.1103/PhysRevLett.67.1626

M. W. Keller, J. M. Martinis, and R. L. Kautz, Rare Errors in a Well-Characterized Electron Pump: Comparison of Experiment and Theory, Physical Review Letters, vol.80, issue.20, p.4530, 1998.
DOI : 10.1103/PhysRevLett.80.4530

S. V. Lotkhov, S. A. Bogoslovsky, A. B. Zorin, and J. Niemeyer, Operation of a three-junction single-electron pump with on-chip resistors, Applied Physics Letters, vol.78, issue.7, pp.946-948, 2001.
DOI : 10.1063/1.1347017

A. B. Zorin, S. V. Lotkhov, H. Zangerle, and J. Niemeyer, Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: Towards the implementation of the R pump, Journal of Applied Physics, vol.88, issue.5, pp.2665-2670, 2000.
DOI : 10.1063/1.1286328

M. D. Blumenthal, B. Kaestner, L. Li, S. Giblin, T. J. Janssen et al., Gigahertz quantized charge pumping, Nature Physics, vol.147, issue.5, p.343, 2007.
DOI : 10.1063/1.2405419

Y. Ono and Y. Takahashi, Electron pump by a combined single-electron/field-effect- transistor structure, Applied Physics Letters, vol.82, issue.8, p.1221, 2003.
DOI : 10.1063/1.1556558

K. W. Chan, M. Mottonen, A. Kemppinen, N. S. Lai, K. Y. Tan et al., Single-electron shuttle based on a silicon quantum dot, Applied Physics Letters, vol.98, issue.21, pp.98212103-98212106, 2011.
DOI : 10.1063/1.3593491

A. Fujiwara, K. Nishiguchi, and Y. Ono, Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters, vol.92, issue.4, pp.42102-42105, 2008.
DOI : 10.1063/1.2837544

B. Kaestner, V. Kashcheyevs, G. Hein, K. Pierz, U. Siegner et al., Robust single-parameter quantized charge pumping, Applied Physics Letters, vol.92, issue.19, pp.192106-192109, 2008.
DOI : 10.1063/1.2928231

URL : http://arxiv.org/abs/0803.0869

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li et al., Single-parameter nonadiabatic quantized charge pumping, Physical Review B, vol.77, issue.15, pp.77153301-77153305, 2008.
DOI : 10.1103/PhysRevB.77.153301

P. Jukka, J. J. Pekola, M. Vartiainen, O. Möttönon, M. Saira et al., Averin : Hybrid single-electron transistor as a source of quantized electric current, Nature Physics, vol.4, pp.120-124, 2008.

P. W. Brouwer, Scattering approach to parametric pumping, Physical Review B, vol.58, issue.16, pp.10135-10138, 1998.
DOI : 10.1103/PhysRevB.58.R10135

F. Giazotto, P. Spathis, S. Roddaro, S. Biswas, F. Taddei et al., A Josephson quantum electron pump, Nature Physics, vol.19, issue.11, pp.857-861, 2011.
DOI : 10.1021/nl072024a

URL : https://hal.archives-ouvertes.fr/hal-00984202

C. Zener, Non-Adiabatic Crossing of Energy Levels, Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.137, issue.833, pp.696-702, 1932.
DOI : 10.1098/rspa.1932.0165

T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong, and Y. Hirayama, Coherent Manipulation of Electronic States in a Double Quantum Dot, Physical Review Letters, vol.91, issue.22, pp.91-226804
DOI : 10.1103/PhysRevLett.91.226804

K. D. Petersson, J. R. Petta, H. Lu, and A. C. Gossard, Quantum Coherence in a One-Electron Semiconductor Charge Qubit, Physical Review Letters, vol.105, issue.24, pp.246804-2010
DOI : 10.1103/PhysRevLett.105.246804

D. Loss, P. David, and . Divincenzo, Quantum computation with quantum dots, Physical Review A, vol.57, issue.1, pp.120-126, 1998.
DOI : 10.1103/PhysRevA.57.120

B. E. Kane, A silicon-based nuclear spin quantum computer, Nature, vol.393, issue.6681, pp.133-137, 1998.
DOI : 10.1038/30156

R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin et al., Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures, Physical Review A, vol.62, issue.1, p.12306, 2000.
DOI : 10.1103/PhysRevA.62.012306

L. C. Hollenberg, A. S. Dzurak, C. Wellard, A. R. Hamilton, D. J. Reilly et al., Charge-based quantum computing using single donors in semiconductors, Physical Review B, vol.69, issue.11, p.69113301, 2004.
DOI : 10.1103/PhysRevB.69.113301

T. H. Stoof and Y. V. Nazarov, Time-dependent resonant tunneling via two discrete states, Physical Review B, vol.53, issue.3, pp.1050-1996
DOI : 10.1103/PhysRevB.53.1050

URL : http://arxiv.org/abs/cond-mat/9506036

L. Livadaru, P. Xue, Z. Shaterzadeh-yazdi, G. A. Dilabio, J. Mutus et al., Dangling-bond charge qubit on a silicon surface, New Journal of Physics, vol.12, issue.8, p.83018, 2010.
DOI : 10.1088/1367-2630/12/8/083018

Y. Nakamura, Y. A. Pashkin, T. Yamamoto, and J. S. Tsai, Charge Echo in a Cooper-Pair Box, Physical Review Letters, vol.88, issue.4, p.47901, 2002.
DOI : 10.1103/PhysRevLett.88.047901

T. Fujisawa, T. H. Oosterkamp, W. G. Van-der-wiel, B. W. Broer, R. Aguado et al., Kouwenhoven : Spontaneous Emission Spectrum in Double Quantum Dot Devices, Science, issue.5390, pp.282932-935, 1998.

C. Weber, A. Fuhrer, C. Fasth, G. Lindwall, L. Samuelson et al., Probing Confined Phonon Modes by Transport through a Nanowire Double Quantum Dot, Physical Review Letters, vol.104, issue.3, p.36801, 2010.
DOI : 10.1103/PhysRevLett.104.036801

L. C. Jamieson, Hollenberg : Charge State Control and Relaxation in an Atomically Doped Silicon Device, Nano Lett, vol.7, issue.7, pp.2000-2003, 2007.

J. R. Rubbmark, M. M. Kash, M. G. Littman, and D. Kleppner, Dynamical effects at avoided level crossings: A study of the Landau-Zener effect using Rydberg atoms, Physical Review A, vol.23, issue.6, pp.3107-3117, 1981.
DOI : 10.1103/PhysRevA.23.3107

P. K. Tien and J. P. Gordon, Multiphoton Process Observed in the Interaction of Microwave Fields with the Tunneling between Superconductor Films, Physical Review, vol.129, issue.2, pp.647-651, 1963.
DOI : 10.1103/PhysRev.129.647

S. N. Shevchenko, S. Ashhab, and F. Nori, Landau???Zener???St??ckelberg interferometry, Physics Reports, vol.492, issue.1, pp.1-30, 2010.
DOI : 10.1016/j.physrep.2010.03.002

URL : http://arxiv.org/abs/0911.1917