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            <title xml:lang="en">Impact of carbon ion implantation on phosphorus-doped bipolar transistors</title>
            <title xml:lang="fr">Influence de l'implantation du carbone sur le dopage au phosphore des transistors bipolaires</title>
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                <title xml:lang="en">Impact of carbon ion implantation on phosphorus-doped bipolar transistors</title>
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                <authority type="supervisor">Didier Blavette</authority>
                <authority type="jury">Marie-France Barthe [Président]</authority>
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                <term xml:lang="en">Atom probe tomography</term>
                <term xml:lang="en">Defects</term>
                <term xml:lang="en">Diffusion</term>
                <term xml:lang="en">Carbon</term>
                <term xml:lang="en">Ion implantation</term>
                <term xml:lang="fr">Défauts</term>
                <term xml:lang="fr">Diffusion</term>
                <term xml:lang="fr">Sonde atomique tomographique</term>
                <term xml:lang="fr">Carbone</term>
                <term xml:lang="fr">Implantation ionique</term>
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              <p>The development of a cost-effective bipolar transistor requires a collector doped by ion implantation. A low-resistive collector is needed to ease the electron flux towards the contact. The high dose required can only be processed fast enough on “high-current” implant machines which are limited in energy. The choice of the N type dopant has been made regarding this limitation. Phosphorus has been selected as it features a lower mass than arsenic and antimony. Indeed, at a given dose and energy, phosphorus profile is deeper and hence less resistive as compared to arsenic and antimony profiles. However, the high phosphorus diffusion coefficient leads to a dopant pile-up close to the base. This pile-up degrades the electrical properties of the base/collector junction. This side effect is hindered by using carbon co-implantation. Upon the first anneal step, the duration of the phosphorus transient enhanced diffusion regime is reduced by carbon. Upon the second anneal step, carbon establishes a self-interstitial undersaturation. Hence, phosphorus diffusion is greatly reduced. To sum up, low resistance as well as high junction voltages (Early and breakdown) are reached thanks to the combined action of carbon and phosphorus.</p>
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              <p>La conception de transistors bipolaires de moindre coût nécessite entre-autres l’implémentation d’un collecteur réalisé par implantation ionique. Ce dernier doit être faiblement résistif pour faciliter le transit des électrons vers les contacts. Le fort dopage requis nécessite l’utilisation d’implanteurs « fort-courants » qui sont, en revanche, limités en énergie. Cette limitation conditionne le choix du dopant type N : le phosphore est retenu car il présente une masse plus faible que l’arsenic ou l’antimoine. Il contribue donc à l’obtention d’un profil plus profond, et donc moins résistif, à énergie donnée. En revanche, le coefficient de diffusion élevée du phosphore conduit à une dégradation des propriétés électriques de la jonction base-collecteur. La co-implantation du carbone permet de s’affranchir de cet effet. Au cours de la première phase du recuit, le carbone permet de réduire la durée du régime de diffusion accélérée du phosphore. Au cours de la seconde phase, le carbone instaure une sous-saturation en auto-interstitiels qui atténue fortement la diffusion du phosphore. L’action combinée du phosphore et du carbone permet donc d’atteindre à la fois une résistance faible et des tensions de jonction (claquage et Early directe) élevées</p>
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