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Electrical characterization and modeling of advanced SOI materials and devices

Abstract : This thesis is dedicated to the electrical characterization and transport modeling in advanced SOImaterials and devices for ultimate micro-nano-electronics. SOI technology is an efficient solution tothe technical challenges facing further downscaling and integration. Our goal was to developappropriate characterization methods and determine the key parameters. Firstly, the conventionalpseudo-MOSFET characterization was extended to heavily-doped SOI wafers and an adapted modelfor parameters extraction was proposed. We developed a nondestructive electrical method to estimatethe quality of bonding interface in metal-bonded wafers for 3D integration. In ultra-thin fully-depletedSOI MOSFETs, we evidenced the parasitic bipolar effect induced by band-to-band tunneling, andproposed new methods to extract the bipolar gain. We investigated multiple-gate transistors byfocusing on the coupling effect in inversion-mode vertical double-gate SOI FinFETs. An analyticalmodel was proposed and subsequently adapted to the full depletion region of junctionless SOI FinFETs.We also proposed a compact model of carrier profile and adequate parameter extraction techniques forjunctionless nanowires.
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Submitted on : Thursday, October 15, 2015 - 4:42:10 PM
Last modification on : Friday, March 25, 2022 - 9:40:24 AM
Long-term archiving on: : Monday, January 18, 2016 - 5:56:00 AM


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  • HAL Id : tel-01216170, version 1



Fanyu Liu. Electrical characterization and modeling of advanced SOI materials and devices. Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes, 2015. English. ⟨NNT : 2015GREAT034⟩. ⟨tel-01216170⟩



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