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Caractérisation et modélisation du transistor JFET en SiC à haute température

Abstract : In the field of power of electronics, silicon carbide (SiC) devices are well suited to operate in environments at high temperature, high power, high voltage and high radiation. The silicon carbide belongs to the class of wide band gap semiconductor material. Indeed, this material has higher values than the silicon ones for the temperature breakdown and a high electric field breakdown. These characteristics enable significant improvements in wide varieties of applications and systems. Among the existing switches, SiC JFET is the most advanced one in its technological development because it is at the stage of pre-marketing. The study realized during this thesis was to electrically characterize SiC JFETs from SiCED versus the temperature (25°C-300°C). The characteristic are based on static measurements (currentvoltage), capacitive measurements (capacitive-voltage) and switching measurements in an R-L (resistor-inductor) load circuit and an inverter leg. A multi-physical model of the VJFET with a lateral channel is presented. The model was developed and validated in MAST language both in static and dynamic modes using the SABER simulator. The model includes an asymmetric representation of the lateral channel and the junction capacitances of the structure. The validation of the model shows a good agreement between measurements and simulation.
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Submitted on : Thursday, February 2, 2012 - 5:52:43 PM
Last modification on : Monday, September 13, 2021 - 2:44:03 PM
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  • HAL Id : tel-00665817, version 1


Youness Hamieh. Caractérisation et modélisation du transistor JFET en SiC à haute température. Autre. INSA de Lyon, 2011. Français. ⟨NNT : 2011ISAL0038⟩. ⟨tel-00665817⟩



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