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Caractérisation physique de la microstructure des interconnexions avancées Cu/Low-k pour l'étude des défaillances par électromigration

Abstract : Electromigration is one of the major cause of copper interconnect degradation which limits reliability of microelectronic products. In these works, link between copper morphological parameters and electromigration is studied to get more knowledge of this phenomenon. For that, copper structures from 45 nm technology node and beyond are characterized by backscattered electron diffraction technique. In a first time, developments of sample preparation and acquisition methodology are performed to be able to characterize small dimensions structures from technology node chosen. A link between high angle grain boundary and void location has been highlighted. Then we tried to improve reliability by copper microstructure change without success. It seems that right way to improve interconnect resistance toward electromigration is the introduction of new materials in copper (Al, Co) to reinforce upper interface which is critical diffusion path of electromigration phenomenon.
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https://theses.hal.science/tel-00669388
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Submitted on : Monday, February 13, 2012 - 11:01:23 AM
Last modification on : Friday, March 25, 2022 - 9:41:38 AM
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  • HAL Id : tel-00669388, version 1

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Romain Galand. Caractérisation physique de la microstructure des interconnexions avancées Cu/Low-k pour l'étude des défaillances par électromigration. Autre. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENI052⟩. ⟨tel-00669388⟩

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